BTA416Y-800C NXP Semiconductors, BTA416Y-800C Datasheet - Page 4

• Manufacturer Part Number: BTA416Y-800C
• Description: Triacs RAIL-THYR AND TRIACS
• Manufacturer: NXP Semiconductors

Specifications of BTA416Y-800C

• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Breakover Current Ibo Max: 176 A
• Off-state Leakage Current @ Vdrm Idrm: 2 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 35 mA
• Holding Current (ih Max): 35 mA
• Forward Voltage Drop: 1.5 V @ 20 A
• Mounting Style: Through Hole
• Package / Case: TO-220
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BTA416Y-800C,127

NXP Semiconductors
BTA416Y-800C
Product data sheet
Fig 3.
Fig 4.
I
(A)
TSM
(W)
P
tot
180
150
120
20
16
12
90
60
30
8
4
0
0
values
Total power dissipation as a function of RMS on-state current; maximum values
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
0
1
conduction
(degrees)
angle
120
180
30
60
90
2
factor
form
1.57
2.8
2.2
1.9
a
4
4
All information provided in this document is subject to legal disclaimers.
10
6
Rev. 3 — 24 June 2011
8
10
10
12
2
BTA416Y-800C
14
n (number of cycles)
I
T
T
j(init)
16
1/f
= 25 C max
120
90
60
30
= 180
© NXP B.V. 2011. All rights reserved.
I
T(RMS)
3Q Hi-Com Triac
003aab816
003aab817
I
TSM
(A)
t
10
18
3
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