BTA416Y-800C NXP Semiconductors, BTA416Y-800C Datasheet - Page 6

• Manufacturer Part Number: BTA416Y-800C
• Description: Triacs RAIL-THYR AND TRIACS
• Manufacturer: NXP Semiconductors

Specifications of BTA416Y-800C

• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Breakover Current Ibo Max: 176 A
• Off-state Leakage Current @ Vdrm Idrm: 2 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 35 mA
• Holding Current (ih Max): 35 mA
• Forward Voltage Drop: 1.5 V @ 20 A
• Mounting Style: Through Hole
• Package / Case: TO-220
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BTA416Y-800C,127

NXP Semiconductors
6. Isolation characteristics
Table 6.
7. Characteristics
Table 7.
BTA416Y-800C
Product data sheet
Symbol
V
C
Symbol
Static characteristics
I
I
I
V
V
I
Dynamic characteristics
dV
dI
t
GT
L
H
D
gt
isol(RMS)
T
GT
isol
com
D
/dt
/dt
Isolation characteristics
Characteristics
Parameter
RMS isolation voltage
isolation capacitance
Parameter
gate trigger current
latching current
holding current
on-state voltage
gate trigger voltage
off-state current
rate of rise of off-state
voltage
rate of change of
commutating current
gate-controlled turn-on
time
Conditions
from all terminals to external heatsink;
sinusoidal waveform; clean and dust
free ; 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %;
T
from main terminal 2 to external
heatsink ; f = 1 MHz; T
Conditions
V
T
V
T
V
T
V
T
V
T
V
T
V
I
V
see
V
V
V
V
waveform; gate open circuit
V
waveform; gate open circuit
V
dV
condition); gate open circuit
V
dV
condition); gate open circuit
I
dI
All information provided in this document is subject to legal disclaimers.
T
TM
mb
j
j
j
j
j
j
D
D
D
D
D
D
D
D
D
D
D
DM
DM
D
D
G
= 20 A; T
= 25 °C; see
= 25 °C; see
= 25 °C; see
= 25 °C; see
= 25 °C; see
= 25 °C; see
com
com
/dt = 5 A/µs
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; T
= 12 V; I
= 400 V; I
= 800 V; T
= 800 V; T
= 400 V; T
= 400 V; T
= 20 A; V
Figure 11
= 25 °C
= 536 V; T
= 536 V; T
/dt = 20 V/µs; (without snubber
/dt = 20 V/µs; (without snubber
Rev. 3 — 24 June 2011
j
T
T
T
G
G
G
T
j
= 25 °C; see
T
D
= 0.1 A; T2+ G+;
= 0.1 A; T2+ G-;
= 0.1 A; T2- G-;
= 0.1 A; T
= 25 °C; see
= 0.1 A; T2+ G+;
= 0.1 A; T2+ G-;
= 0.1 A; T2- G-;
j
j
j
j
= 0.1 A; T
= 125 °C
= 150 °C
= 125 °C; I
= 150 °C; I
= 800 V; I
j
j
Figure 7
Figure 7
Figure 7
Figure 8
Figure 8
Figure 8
= 125 °C; exponential
= 150 °C; exponential
mb
j
= 25 °C;
j
G
= 150 °C
T(RMS)
T(RMS)
= 25 °C
Figure 10
= 100 mA;
Figure 9
= 16 A;
= 16 A;
BTA416Y-800C
Min
-
-
Min
2
2
2
-
-
-
-
-
-
0.25
-
-
500
300
10
4
-
Typ
-
10
Typ
-
-
-
-
-
-
-
1.2
0.7
0.4
0.1
0.4
-
-
-
-
2
© NXP B.V. 2011. All rights reserved.
3Q Hi-Com Triac
Max
2500
-
Max
35
35
35
50
60
50
35
1.5
1.5
-
0.5
2
-
-
-
-
-
Unit
V
pF
Unit
mA
mA
mA
mA
mA
mA
mA
V
V
V
mA
mA
V/µs
V/µs
A/ms
A/ms
µs
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