BFP 450 H6327 Infineon Technologies, BFP 450 H6327 Datasheet - Page 11

• Manufacturer Part Number: BFP 450 H6327
• Description: RF Bipolar Small Signal RF BIP TRANSISTOR
• Manufacturer: Infineon Technologies

Specifications of BFP 450 H6327

• Dc Collector/base Gain Hfe Min: 60
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 24 GHz
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 1.5 V
• Continuous Collector Current: 10 mA
• Power Dissipation: 450 mW
• Maximum Operating Temperature: + 150 C
• Package / Case: SOT-343
• Mounting Type: Surface Mount
• Power - Max: 450mW
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 4.5V
• Gain: 15.5dB
• Transistor Type: NPN
• Frequency - Transition: 24GHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 50mA, 4V
• Noise Figure (db Typ @ F): 1.25dB @ 1.8GHz
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFP450H6327XT

4.3
Measurement setup is a test fixture with Bias T’s in a 50 Ω system,
Figure 2
Table 5
Parameter
Maximum power gain
High linearity operation point
Class A operation point
Transducer gain
High linearity operation point
Class A operation point
Minimum noise figure
Minimum noise figure
Associated gain
Linearity
1 dB gain compression point
3rd order intercept point
Data Sheet
IN
Frequency Dependent AC Characteristics
BFP450 Testing Circuit
AC Characteristics,
Bias-T
VB
V
CE
= 3 V,
Symbol
G
G
S
S
NF
G
OP
OIP
21
21
ms
ms
ass
(Pin 1)
min
1dB
E
B
3
f
= 150 MHz
Top View
Min.
–
–
–
–
–
–
–
–
11
Typ.
34.5
35.5
33
33.5
1.55
32
19
30.5
Values
C
E
T
A
= 25 °C
Max.
–
–
–
–
–
–
–
–
Unit
dB
dB
dB
dBm
VC
Bias -T
Electrical Characteristics
Revision 1.0, 2010-10-22
Note / Test Condition
I
I
Z
I
I
Z
I
I
Z
I
I
C
C
C
C
C
C
C
C
S
S
S
= 50 mA
= 90 mA
= 50 mA
= 90 mA
= 50 mA
= 50 mA
= 90 mA
= 90 mA
=
=
=
Z
Z
Z
L
opt
L
= 50 Ω
= 50 Ω
BFP450
OUT