BFP 450 E6327 Infineon Technologies, BFP 450 E6327 Datasheet - Page 8
BFP 450 E6327
Manufacturer Part Number
BFP 450 E6327
Description
RF Bipolar Small Signal TRANS GP BJT NPN 4.5V 0.1A
Manufacturer
Infineon Technologies
Datasheet
1.BFP_450_H6327.pdf
(27 pages)
Specifications of BFP 450 E6327
Dc Collector/base Gain Hfe Min
60
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Frequency
24000 MHz
Collector- Emitter Voltage Vceo Max
4.5 V
Emitter- Base Voltage Vebo
1.5 V
Continuous Collector Current
100 mA
Power Dissipation
450 mW
Maximum Operating Temperature
+ 150 C
Package / Case
SOT-343
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BFP450E6327XT
2
Table 1
Parameter
Collector emitter voltage
Collector emitter voltage
Collector base voltage
Emitter base voltage
Collector current
Base current
Total power dissipation
Junction temperature
Storage temperature
1) T
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Data Sheet
S
is the soldering point temperature. T
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
Maximum Ratings
Maximum Ratings
1)
Symbol
V
V
V
V
I
I
P
T
T
C
B
J
Stg
CEO
CES
CBO
EBO
tot
S
measured on the emitter lead at the soldering point of the pcb.
Values
Min.
–
–
–
–
–
–
–
–
–
-65
8
150
Max.
4.5
4.1
15
15
1.5
170
10
500
150
Unit
V
V
V
V
V
mA
mA
mW
°C
°C
Note / Test Condition
Open base
T
T
Emitter / base shortened
Open emitter
Open collector
–
–
T
–
–
Revision 1.0, 2010-10-22
A
A
S
= 25 °C
= -55 °C
≤ 90 °C
Maximum Ratings
BFP450