BFG520/X T/R NXP Semiconductors, BFG520/X T/R Datasheet - Page 4

• Manufacturer Part Number: BFG520/X T/R
• Description: RF Bipolar Small Signal TAPE7 TNS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BFG520/X T/R

• Dc Collector/base Gain Hfe Min: 60
• Dc Current Gain Hfe Max: 60
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.07 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 175 C
• Package / Case: SOT-143
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFG520/X,215

NXP Semiconductors
CHARACTERISTICS
T
Notes
1. G
2. I
3. d
I
h
C
C
C
f
G
F
P
ITO
V
d
SYMBOL
j
CBO
T
S
FE
2
L1
o
= 25 C unless otherwise specified.
e
c
re
NPN 9 GHz wideband transistor
UM
21
G
f
measured at f
V
f
measured at f
C
p
p
im
p
UM
UM
2
= 900 MHz; f
= 795.25 MHz; f
= 20 mA; V
= V
= 60 dB (DIN 45004B);
is the maximum unilateral power gain, assuming S
=
o
; V
10 log
collector cut-off current
DC current gain
emitter capacitance
collector capacitance
feedback capacitance
transition frequency
maximum unilateral
power gain (note 1)
insertion power gain
noise figure
output power at 1 dB gain
compression
third order intercept point
output voltage
second order intermodulation
distortion
q
= V
CE
(2p q)
(p q r)
q
------------------------------------------------------------- - dB.
o
PARAMETER
1
= 6 V; R
= 902 MHz;
6 dB; V
q
–
= 898 MHz and f
= 803.25 MHz; f
= 793.25 MHz
S
11
2
S
L
r
21
= 50
= V
1
2
o
–
S
6 dB;
22
f = 900 MHz; T
(2q p)
r
2
= 805.25 MHz;
I
I
I
I
I
I
T
I
T
I
T
I
T
f = 900 MHz; T
f = 900 MHz; T
f = 2 GHz; T
I
f = 900 MHz; T
note 2
note 3
I
T
E
C
C
E
C
C
C
C
C
C
C
amb
amb
amb
amb
s
s
s
amb
= 904 MHz.
= 0; V
= i
= 20 mA; V
= i
= 0; V
= 20 mA; V
= 20 mA; V
= 20 mA; V
= 20 mA; V
= 20 mA; V
= 20 mA; V
Rev. 04 - 23 November 2007
=
=
=
e
c
= 25 C
= 25 C
= 25 C
= 25 C
= 25 C; f
opt
opt
opt
= 0; V
= 0; V
CB
CB
; I
; I
; I
amb
C
C
C
= 6 V
= 6 V; f = 1 MHz
CONDITIONS
= 5 mA; V
= 20 mA; V
= 5 mA; V
amb
EB
CB
= 25 C;
CE
CE
CE
CE
CE
CE
CE
amb
amb
amb
(p q)
12
= 0.5 V; f = 1 MHz
= 6 V; f = 1 MHz
= 25 C
= 6 V
= 6 V; f = 1 GHz;
= 6 V; f = 900 MHz;
= 6 V; f = 2 GHz;
= 6 V; f = 900 MHz;
= 6 V; R
= 6 V; V
is zero and
= 25 C
= 25 C
= 25 C
= 810 MHz
BFG520; BFG520/X; BFG520/XR
CE
CE
CE
o
L
= 6 V;
= 6 V;
= 75 mV;
= 6 V;
= 50 ;
60
17
MIN.
120
1
0.6
0.3
9
19
13
18
1.1
1.6
1.9
17
26
275
50
TYP.
Product specification
50
250
1.6
2.1
MAX.
4 of 14
nA
pF
pF
pF
GHz
dB
dB
dB
dB
dB
dB
dBm
dBm
mV
dB
UNIT