BFG520/X T/R NXP Semiconductors, BFG520/X T/R Datasheet - Page 9

• Manufacturer Part Number: BFG520/X T/R
• Description: RF Bipolar Small Signal TAPE7 TNS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BFG520/X T/R

• Dc Collector/base Gain Hfe Min: 60
• Dc Current Gain Hfe Max: 60
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.07 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 175 C
• Package / Case: SOT-143
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFG520/X,215

NXP Semiconductors
handbook, full pagewidth
handbook, full pagewidth
NPN 9 GHz wideband transistor
I
I
Z
C
C
o
= 20 mA; V
= 20 mA; V
= 50 .
CE
CE
= 6 V.
= 6 V.
Fig.18 Common emitter forward transmission coefficient (S
180
180
Fig.17 Common emitter input reflection coefficient (S
50
40 MHz
0
135
135
135
135
40
0.2
0.2
0.2
30
0.5
0.5
Rev. 04 - 23 November 2007
20
3 GHz
0.5
10
90
90
90
90
1
1
1
3 GHz
BFG520; BFG520/X; BFG520/XR
2
40 MHz
2
2
5
45
45
45
45
5
5
MRA678
MRA679
11
).
0
0
21
).
1.0
0.8
0.6
0.4
0.2
0
1.0
Product specification
9 of 14