BFG520/X T/R NXP Semiconductors, BFG520/X T/R Datasheet - Page 9
![RF Bipolar Small Signal TAPE7 TNS-RFSS](/photos/16/4/160413/sot143_sml.jpg)
BFG520/X T/R
Manufacturer Part Number
BFG520/X T/R
Description
RF Bipolar Small Signal TAPE7 TNS-RFSS
Manufacturer
NXP Semiconductors
Datasheet
1.BFG520X_TR.pdf
(14 pages)
Specifications of BFG520/X T/R
Dc Collector/base Gain Hfe Min
60
Dc Current Gain Hfe Max
60
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Frequency
9000 MHz
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
2.5 V
Continuous Collector Current
0.07 A
Power Dissipation
300 mW
Maximum Operating Temperature
+ 175 C
Package / Case
SOT-143
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BFG520/X,215
NXP Semiconductors
handbook, full pagewidth
handbook, full pagewidth
NPN 9 GHz wideband transistor
I
I
Z
C
C
o
= 20 mA; V
= 20 mA; V
= 50 .
CE
CE
= 6 V.
= 6 V.
Fig.18 Common emitter forward transmission coefficient (S
180
180
Fig.17 Common emitter input reflection coefficient (S
50
40 MHz
0
135
135
135
135
40
0.2
0.2
0.2
30
0.5
0.5
Rev. 04 - 23 November 2007
20
3 GHz
0.5
10
90
90
90
90
1
1
1
3 GHz
BFG520; BFG520/X; BFG520/XR
2
40 MHz
2
2
5
45
45
45
45
5
5
MRA678
MRA679
11
).
0
0
21
).
1.0
0.8
0.6
0.4
0.2
0
1.0
Product specification
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