BFG520/X T/R NXP Semiconductors, BFG520/X T/R Datasheet - Page 7

• Manufacturer Part Number: BFG520/X T/R
• Description: RF Bipolar Small Signal TAPE7 TNS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BFG520/X T/R

• Dc Collector/base Gain Hfe Min: 60
• Dc Current Gain Hfe Max: 60
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.07 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 175 C
• Package / Case: SOT-143
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFG520/X,215

NXP Semiconductors
handbook, halfpage
handbook, halfpage
NPN 9 GHz wideband transistor
Fig.11 Intermodulation distortion as a function of
V
Fig.13 Minimum noise figure and associated
CE
F min
(dB)
(dB)
d im
= 6 V; T
20
30
40
50
60
70
5
4
3
2
1
0
0
1
2000 MHz
1000 MHz
collector current.
available gain as functions of collector
current.
900 MHz
500 MHz
amb
= 25 C.
10
F min
20
10
G ass
30
I C (mA)
f = 900 MHz
1000 MHz
2000 MHz
40
I C (mA)
MEA975
MRA682
Rev. 04 - 23 November 2007
50
10
20
15
10
0
G ass
5
2
(dB)
5
handbook, halfpage
handbook, halfpage
Fig.12 Second order intermodulation distortion as
V
Fig.14 Minimum noise figure and associated
CE
BFG520; BFG520/X; BFG520/XR
F min
(dB)
(dB)
d 2
= 6 V; T
20
30
40
50
60
70
5
4
3
2
1
0
10
0
20 mA
2
a function of collector current.
available gain as functions of frequency.
5 mA
amb
= 25 C.
I C = 5 mA
10
F min
20
20 mA
10
G ass
3
30
f (MHz)
Product specification
40
I C (mA)
MEA974
MRA683
7 of 14
50
10
20
15
10
0
5
4
G ass
(dB)
5