BLF6G38-25 NXP Semiconductors, BLF6G38-25 Datasheet - Page 4

• Manufacturer Part Number: BLF6G38-25
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G38-25

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.58 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 2.1 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: CDFM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G38-25,112

NXP Semiconductors
BLF6G38-25_BLF6G38S-25_2
Product data sheet
Fig 1.
EVM
(%)
(1)
(2)
(3)
30
24
18
12
6
0
10
V
frame duration = 5 ms; bandwidth = 10 MHz;
frequency band = WCS; n = 28 / 25; G = 1 / 8;
FFT = 1024; zone type = PUSC;
number of symbols = 46; number of subchannels = 30.
EVM as function of load power; typical values
f = 3400 MHz
f = 3500 MHz
f = 3600 MHz
DS
1
= 28 V; I
7.2.1 WiMAX signal description
7.2.2 Graphs
7.2 NXP WiMAX signal
(1)
(2)
(3)
Dq
1
= 225 mA; OFDMA signal;
frame duration = 5 ms; bandwidth = 10 MHz; sequency = 1 frame;
frequency band = WCS; sampling rate = 11.2 MHz; n = 8 / 7; G = T
FFT = 1024; zone type = PUSC; = 97.7 %; number of symbols = 46;
number of subchannels = 30; PAR = 9.5 dB.
Preamble: 1 symbol
Table 8.
Frame contents
Zone 0
Zone 0
Zone 0
FCH
data
data
10
Frame structure
P
2 symbols
2 symbols
44 symbols
L
001aah594
(W)
Rev. 02 — 23 December 2008
10
30 subchannels; P
2
4 subchannels
26 subchannels
30 subchannels
BLF6G38-25; BLF6G38S-25
Fig 2.
(dB)
G
p
18
16
14
12
10
L
10
= P
V
OFDMA signal; frame duration = 5 ms;
bandwidth = 10 MHz; frequency band = WCS;
n = 28 / 25; G = 1 / 8; FFT = 1024; zone type = PUSC;
number of symbols = 46; number of subchannels = 30.
Power gain and drain efficiency as functions of
average load power; typical values
1
DS
L(nom)
= 28 V; I
Modulation technique
QPSK1/2
64QAM3/4
64QAM3/4
G
D
p
+ 3.86 dB
Dq
WiMAX power LDMOS transistor
1
= 225 mA; f = 3500 MHz;
10
g
/ T
P
L(AV)
© NXP B.V. 2008. All rights reserved.
b
001aah595
= 1 / 8;
(W)
Data length
3
692
10000
10
2
48
36
24
12
0
(%)
D
4 of 13