BLF6G38-25 NXP Semiconductors, BLF6G38-25 Datasheet - Page 6

RF MOSFET Small Signal LDMOS TNS

BLF6G38-25

Manufacturer Part Number
BLF6G38-25
Description
RF MOSFET Small Signal LDMOS TNS
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF6G38-25

Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.58 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
13 V
Continuous Drain Current
2.1 A
Maximum Operating Temperature
+ 225 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Package / Case
CDFM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BLF6G38-25,112

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BLF6G38-25
Manufacturer:
NXP
Quantity:
1 000
Part Number:
BLF6G38-25
Manufacturer:
NXP
Quantity:
5 000
Part Number:
BLF6G38-25112
Manufacturer:
NXP Semiconductors
Quantity:
135
NXP Semiconductors
BLF6G38-25_BLF6G38S-25_2
Product data sheet
Fig 6.
Fig 8.
(dB)
(dB)
G
G
(1) f = 3400 MHz
(2) f = 3500 MHz
(3) f = 3600 MHz
p
p
18
16
14
12
10
18
16
14
12
10
10
10
V
N-CDMA; PAR = 9.7 dB at 0.01 % probability;
channel bandwidth = 1.23 MHz; IBW = 30 kHz.
Power gain and drain efficiency as functions of
load power; typical values
V
PAR = 9.7 dB at 0.01 % probability;
channel bandwidth = 1.23 MHz; IBW = 30 kHz.
Power gain as function of load power; typical
values
DS
DS
1
1
= 28 V; I
= 28 V; I
G
D
p
(2)
(1)
(3)
Dq
Dq
1
1
= 225 mA; f = 3500 MHz; single carrier
= 225 mA; single carrier N-CDMA;
10
10
P
P
L
L
001aah599
001aah601
(W)
(W)
Rev. 02 — 23 December 2008
10
10
2
2
48
36
24
12
0
(%)
D
BLF6G38-25; BLF6G38S-25
Fig 7.
Fig 9.
ACPR
(dBc)
(W)
P
(1) Low frequency component
(2) High frequency component
(1) f = 3400 MHz
(2) f = 3500 MHz
(3) f = 3600 MHz
i
0.8
0.6
0.4
0.2
30
40
50
60
70
80
0
10
10
V
N-CDMA; PAR = 9.7 dB at 0.01 % probability;
channel bandwidth = 1.23 MHz; IBW = 30 kHz.
Adjacent channel power ratio as function of
average load power; typical values
V
PAR = 9.7 dB at 0.01 % probability;
channel bandwidth = 1.23 MHz; IBW = 30 kHz.
Input power as function of load power; typical
values
1
DS
1
DS
= 28 V; I
= 28 V; I
(2)
(1)
(1)
(2)
Dq
Dq
WiMAX power LDMOS transistor
1
1
= 225 mA; f = 3500 MHz; single carrier
= 225 mA; single carrier N-CDMA;
(3)
(2)
(1)
10
10
(2)
(1)
ACPR
ACPR
© NXP B.V. 2008. All rights reserved.
P
P
ACPR
L
L
001aah600
001aah602
(W)
(W)
1500k
1980k
885k
10
10
2
2
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