BLF6G38-25 NXP Semiconductors, BLF6G38-25 Datasheet - Page 7

• Manufacturer Part Number: BLF6G38-25
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G38-25

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.58 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 2.1 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: CDFM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G38-25,112

NXP Semiconductors
8. Test information
Table 9.
BLF6G38-25_BLF6G38S-25_2
Product data sheet
Component
C1
C2, C3
C4, C5, C6, C7, C8, C9, C18 multilayer ceramic chip capacitor 10 pF
C10, C11
C12, C13
C14, C15
C16, C17
C19
C20
C21
Fig 10. Component layout for 3400 MHz to 3600 MHz test circuit
V
GG
Striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with
See
List of components (see
C1
Table 9
C12
C13
C10
C11
for list of components.
R2
R1
C14
C15
Description
multilayer ceramic chip capacitor 22 pF
multilayer ceramic chip capacitor 3 pF
multilayer ceramic chip capacitor 24 pF
multilayer ceramic chip capacitor 4.7 F; 50 V
multilayer ceramic chip capacitor 1 nF
multilayer ceramic chip capacitor 100 nF
multilayer ceramic chip capacitor 10 F; 50 V
electrolytic capacitor
multilayer ceramic chip capacitor 10 pF
Figure
C9
C8
C6
C7
C4
C5
10)
C2
C3
Rev. 02 — 23 December 2008
BLF6G38-25; BLF6G38S-25
Value
470 F; 63 V
C16
C17
C18
C19
Remarks
ATC 100A or equivalent
ATC 100A or equivalent
ATC 100A or equivalent
ATC 100A or equivalent
TDK C4532X7R1H475M or equivalent
ATC 700A or equivalent
Vishay VJ1206Y104KXB or equivalent
TDK C5750X7R1H106M or equivalent
ATC 100B or equivalent
WiMAX power LDMOS transistor
r
= 3.5 and thickness = 0.76 mm.
BLF6G38-25
OUTPUT REV1
3.4 - 3.6 GHz
NXP
C21
L1
R3
© NXP B.V. 2008. All rights reserved.
C20
001aah603
V
DD
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