BAS21AVD,165 NXP Semiconductors, BAS21AVD,165 Datasheet - Page 5

• Manufacturer Part Number: BAS21AVD,165
• Description: DIODE ARRAY SW 200V SOT457R
• Manufacturer: NXP Semiconductors

Specifications of BAS21AVD,165

• Package / Case: SC-74-6
• Voltage - Dc Reverse (vr) (max): 200V
• Diode Type: Standard
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Product: Switching Diodes
• Peak Reverse Voltage: 250 V
• Forward Continuous Current: 200 mA
• Max Surge Current: 625 mA
• Configuration: Single
• Recovery Time: 50 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 100 nA
• Maximum Power Dissipation: 250 mW
• Operating Temperature Range: - 55 C to + 150 C
• Maximum Diode Capacitance: 5 pF
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Voltage - Forward (vf) (max) @ If: -
• Current - Average Rectified (io) (per Diode): -
• Diode Configuration: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934059099165

NXP Semiconductors
GRAPHICAL DATA
2003 Mar 20
handbook, halfpage
handbook, full pagewidth
General purpose diodes
Device mounted on an FR4 printed-circuit board.
Fig.2
Based on square wave currents.
T
j
I FSM
(mA)
= 25 °C prior to surge.
(A)
10
I F
300
200
100
10
10
−1
0
1
2
0
1
Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
100
10
T amb (
o
C)
MBG442
200
10
5
2
handbook, halfpage
(1) T
(2) T
(3) T
Fig.3
(mA)
600
400
200
I F
j
j
j
0
= 150 °C; typical values.
= 25 °C; typical values.
= 25 °C; maximum values.
0
Forward current as a function of forward
voltage.
BAS19; BAS20; BAS21
10
3
1
(1)
(2)
t p (µs)
V F (V)
Product data sheet
(3)
MBG384
MBG703
10
2
4