BAS21AVD,165 NXP Semiconductors, BAS21AVD,165 Datasheet - Page 6

• Manufacturer Part Number: BAS21AVD,165
• Description: DIODE ARRAY SW 200V SOT457R
• Manufacturer: NXP Semiconductors

Specifications of BAS21AVD,165

• Package / Case: SC-74-6
• Voltage - Dc Reverse (vr) (max): 200V
• Diode Type: Standard
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Product: Switching Diodes
• Peak Reverse Voltage: 250 V
• Forward Continuous Current: 200 mA
• Max Surge Current: 625 mA
• Configuration: Single
• Recovery Time: 50 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 100 nA
• Maximum Power Dissipation: 250 mW
• Operating Temperature Range: - 55 C to + 150 C
• Maximum Diode Capacitance: 5 pF
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Voltage - Forward (vf) (max) @ If: -
• Current - Average Rectified (io) (per Diode): -
• Diode Configuration: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934059099165

NXP Semiconductors
2003 Mar 20
handbook, halfpage
handbook, halfpage
General purpose diodes
(1) V
(2) V
Fig.5
(1) BAS21.
(2) BAS20.
(3) BAS19.
Fig.7
(µA)
V R
(V)
10
10
300
200
100
I R
10
10
R
R
0
1
2
1
2
= V
= V
0
0
Reverse current as a function of junction
temperature.
Maximum permissible continuous reverse
voltage as a function of the ambient
temperature.
(1)
(2)
(3)
Rmax
Rmax
; maximum values.
; typical values.
(1)
100
100
(2)
T amb (
T j (
o
C)
o
C)
MBG445
MBG381
200
200
6
handbook, halfpage
f = 1 MHz; T
Fig.6
(pF)
C d
1.0
0.8
0.6
0.4
0.2
0
Diode capacitance as a function of reverse
voltage; typical values.
j
= 25 °C.
2
BAS19; BAS20; BAS21
4
6
Product data sheet
V R (V)
MBG447
8