BAS21AVD,165 NXP Semiconductors, BAS21AVD,165 Datasheet - Page 7
![DIODE ARRAY SW 200V SOT457R](/photos/1/38/13824/sc-74-6_sml.jpg)
BAS21AVD,165
Manufacturer Part Number
BAS21AVD,165
Description
DIODE ARRAY SW 200V SOT457R
Manufacturer
NXP Semiconductors
Datasheet
1.BAS19235.pdf
(10 pages)
Specifications of BAS21AVD,165
Package / Case
SC-74-6
Voltage - Dc Reverse (vr) (max)
200V
Diode Type
Standard
Speed
Standard Recovery >500ns, > 200mA (Io)
Mounting Type
Surface Mount
Product
Switching Diodes
Peak Reverse Voltage
250 V
Forward Continuous Current
200 mA
Max Surge Current
625 mA
Configuration
Single
Recovery Time
50 ns
Forward Voltage Drop
1.25 V
Maximum Reverse Leakage Current
100 nA
Maximum Power Dissipation
250 mW
Operating Temperature Range
- 55 C to + 150 C
Maximum Diode Capacitance
5 pF
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Current - Reverse Leakage @ Vr
-
Voltage - Forward (vf) (max) @ If
-
Current - Average Rectified (io) (per Diode)
-
Diode Configuration
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934059099165
NXP Semiconductors
Product data sheet
General purpose diodes
BAS19; BAS20; BAS21
handbook, full pagewidth
t r
t p
t
D.U.T.
10%
I F
I F
Ω
t rr
R = 50
S
SAMPLING
t
OSCILLOSCOPE
Ω
R = 50
V = V
I x R
R
F
S
i
(1)
90%
V R
MGA881
input signal
output signal
(1) I
= 3 mA.
R
Fig.8 Reverse recovery voltage test circuit and waveforms.
2003 Mar 20
7