UMP1NTR Rohm Semiconductor, UMP1NTR Datasheet - Page 2
![DIODE SWITCH 80V 25MA SOT-353 TR](/photos/5/24/52422/sot-353_pkg_sml.jpg)
UMP1NTR
Manufacturer Part Number
UMP1NTR
Description
DIODE SWITCH 80V 25MA SOT-353 TR
Manufacturer
Rohm Semiconductor
Datasheet
1.UMP1NTR.pdf
(3 pages)
Specifications of UMP1NTR
Voltage - Forward (vf) (max) @ If
900mV @ 5mA
Current - Reverse Leakage @ Vr
100nA @ 70V
Current - Average Rectified (io) (per Diode)
25mA
Voltage - Dc Reverse (vr) (max)
80V
Reverse Recovery Time (trr)
4ns
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
2 Pair Common Anode
Mounting Type
Surface Mount
Package / Case
SC-70-5, SC-88A, SOT-323-5, SOT-353, 5-TSSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Diodes
Electrical characteristic curves (Ta=25°C)
100
100
0.1
10
770
760
750
740
730
720
10
20
15
10
1
5
0
1
0.1
0
100 200 300 400 500 600 700 800 900 1000
FORWARD VOLTAGE:VF(mV)
Ta=150℃
IFSM-t CHARACTERISTICS
VF-IF CHARACTERISTICS
Ta=125℃
VF DISPERSION MAP
IFSM DISRESION MAP
1
AVE:744.4mV
AVE:3.50A
Ta=75℃
TIME:t(ms)
Ifsm
Ifsm
10
8.3ms
Ta=25℃
n=30pcs
IF=5mA
t
1cyc
Ta=-25℃
Ta=25℃
100
10000
1000
1000
0.01
100
100
100
0.1
90
80
70
60
50
40
30
20
10
10
10
10
1
0
9
8
7
6
5
4
3
2
1
0
1
0.001
0
10
REVERSE VOLTAGE:VR(V)
Rth-t CHARACTERISTICS
VR-IR CHARACTERISTICS
20
trr DISPERSION MAP
IR DISPERSION MAP
0.1
AVE:3.5172nA
30
AVE:1.94ns
TIME:t(s)
Mounted on epoxy board
IM=1mA
Ta=150℃
40
1ms
300us
50
10
time
60
Ta=25℃
VR=6V
IF=5mA
RL=50Ω
n=10pcs
IF=10mA
Ta=25℃
n=10pcs
VR=70V
Ta=125℃
Ta=-25℃
Rth(j-a)
Rth(j-c)
Ta=75℃
Ta=25℃
70
1000
80
0.1
2.5
2.4
2.3
2.2
2.1
1.9
1.8
1.7
1.6
1.5
10
1
2
5
4
3
2
1
0
10
9
8
7
6
5
4
3
2
1
0
0
1
IFSM-CYCLE CHARACTERISTICS
AVE:0.97kV
VR-Ct CHARACTERISTICS
C=200pF
R=0Ω
REVERSE VOLTAGE:VR(V)
5
ESD DISPERSION MAP
Ct DISPERSION MAP
NUMBER OF CYCLES
AVE:1.981pF
Ifsm
Rev.B
10
10
AVE:3.71kV
8.3ms
C=100pF
R=1.5kΩ
1cyc
UMP1N
15
Ta=25℃
VR=6V
f=1MHz
n=10pcs
8.3ms
f=1MHz
100
20
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