RB731XNTR Rohm Semiconductor, RB731XNTR Datasheet - Page 2

• Manufacturer Part Number: RB731XNTR
• Description: DIODE SCHOTTKY 40V 0.03A UMD6
• Manufacturer: Rohm Semiconductor

Specifications of RB731XNTR

• Voltage - Forward (vf) (max) @ If: 370mV @ 1mA
• Current - Reverse Leakage @ Vr: 1µA @ 10V
• Current - Average Rectified (io) (per Diode): 10mA
• Voltage - Dc Reverse (vr) (max): 40V
• Diode Type: Schottky
• Speed: Small Signal =< 200mA (Io), Any Speed
• Diode Configuration: 3 Independent
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -

Diodes
Electrical characteristic curves
1000
0.01
300
290
280
270
260
250
100
100
0.1
20
15
10
10
10
5
0
1
1
0.001
0
Ta=75℃
100 200 300 400 500 600 700 800 900 1000
Ta=125℃
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
Rth-t CHARACTERISTICS
IFSM DISPERSION MAP
VF DIPERSION MAP
0.1
AVE:267.4mV
TIME:t(s)
Mounted on epoxy board
IM=1mA
AVE:7.30A
1ms
Ta=25℃
Ta=-25℃
300us
Ifsm
time
10
Ta=25℃
n=30pcs
8.3ms
IF=1mA
IF=10mA
Rth(j-c)
Rth(j-a)
1cyc
1000
0.001
0.04
0.03
0.02
0.01
0.00
1000
20
15
10
0.01
100
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
5
0
0.1
10
1
0
1
0.00
1
0
Sin(θ＝180)
IFSM-CYCLE CHARACTERISTICS
0.01
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
FORWARD CURRENT Io(A)
Io-Pf CHARACTERISTICS
NUMBER OF CYCLES
AVERAGE RECTIFIED
IR DISPERSION MAP
D=1/2
10
0.02
AVE:0.083nA
Ifsm
10
0.03
8.3ms
20
1cyc
Ta=125℃
0.04
Ta=75℃
Ta=-25℃
Ta=25℃
Ta=25℃
n=30pcs
VR=10V
8.3ms
DC
0.05
30
100
0.003
0.002
0.001
0.1
10
1
10
10
0
9
8
7
6
5
4
3
2
1
0
9
8
7
6
5
4
3
2
1
0
0
0
1
Sin(θ＝180)
5
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
IFSM-t CHARACTERISTICS
VR-P
REVERSE VOLTAGE:VR(V)
Ct DISPERSION MAP
10
10
R
AVE:2.52pF
CHARACTERISTICS
DC
15
TIME:t(ms)
Rev.B
10
20
RB731XN
20
Ifsm
25
f=1MHz
Ta=25℃
n=10pcs
f=1MHz
VR=0V
30
t
30
35
100
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