BYQ28E-200/H,127 NXP Semiconductors, BYQ28E-200/H,127 Datasheet

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BYQ28E-200/H,127

Manufacturer Part Number
BYQ28E-200/H,127
Description
DIODE RECT UFAST 200V SOT78
Manufacturer
NXP Semiconductors
Datasheets

Specifications of BYQ28E-200/H,127

Package / Case
TO-220-3 (Straight Leads)
Voltage - Forward (vf) (max) @ If
1.25V @ 10A
Current - Reverse Leakage @ Vr
10µA @ 200V
Current - Average Rectified (io) (per Diode)
10A
Voltage - Dc Reverse (vr) (max)
200V
Reverse Recovery Time (trr)
25ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole
Product
Switching Diodes
Peak Reverse Voltage
200 V
Forward Continuous Current
10 A
Max Surge Current
55 A
Configuration
Dual Common Cathode
Recovery Time
25 ns
Forward Voltage Drop
1.25 V
Maximum Reverse Leakage Current
10 uA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 40 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934062725127
1. Product profile
2. Pinning information
Table 1.
[1]
Pin
1
2
3
mb
It is not possible to connect to pin 2 of the SOT428 package.
Description
anode 1
cathode
anode 2
mounting base; cathode
Pinning
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
Ultrafast, dual common cathode, epitaxial rectifier diodes in a SOT78 (TO-220AB) and a
SOT428 (DPAK) plastic package.
I
I
I
I
I
I
BYQ28 series E and ED
Rectifier diodes ultrafast, rugged
Rev. 04 — 5 December 2007
Fast switching
Soft recovery characteristic
Reverse surge capability
Output rectifiers in high-frequency switched-mode power supplies
V
V
RRM
F
0.895 V
[1]
200 V
Simplified outline
SOT78 (3-lead TO-220AB)
1 2
mb
3
I
I
I
I
I
SOT428 (DPAK)
Low thermal resistance
Low forward voltage drop
High thermal cycling performance
I
t
O(AV)
rr
= 10 ns (typ)
1
mb
2
10 A
3
Symbol
Product data sheet
1
2
sym084
3

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BYQ28E-200/H,127 Summary of contents

Page 1

BYQ28 series E and ED Rectifier diodes ultrafast, rugged Rev. 04 — 5 December 2007 1. Product profile 1.1 General description Ultrafast, dual common cathode, epitaxial rectifier diodes in a SOT78 (TO-220AB) and a SOT428 (DPAK) plastic package. 1.2 Features ...

Page 2

... NXP Semiconductors 3. Ordering information Table 2. Ordering information Type number Package Name BYQ28E-200 TO-220AB BYQ28ED-200 DPAK 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter V repetitive peak reverse voltage RRM V crest working reverse voltage RWM ...

Page 3

... NXP Semiconductors 5. Thermal characteristics Table 4. Thermal characteristics Symbol Parameter R thermal resistance from junction to th(j-mb) mounting base R thermal resistance from junction to ambient in free air; SOT78 th(j-a) [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint th(j-mb) (K/ Fig 1. Transient thermal impedance from junction to mounting base as a function of pulse width ...

Page 4

... NXP Semiconductors 6. Characteristics Table 5. Characteristics unless otherwise specified. j Symbol Parameter Static characteristics V forward voltage F I reverse current R Dynamic characteristics Q recovered charge r t reverse recovery time rr I peak reverse recovery RM current V forward recovery FR voltage (1) T (2) T (3) T Fig 2. Forward current as a function of forward voltage ...

Page 5

... NXP Semiconductors Fig 3. Reverse recovery definitions 8 P tot (W) 6 0 F(AV) F(RMS) Fig 5. Forward power dissipation as a function of average forward current; square waveform; maximum values BYQ28_SER_E_ED_4 Product data sheet BYQ28 series E and time 100 % 001aab911 Fig 4. Forward recovery definitions 001aag976 ...

Page 6

... NXP Semiconductors 7. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB D L DIMENSIONS (mm are the original dimensions UNIT A 1 4.7 1.40 0.9 1.45 mm 4.1 1.25 0.6 1.00 OUTLINE VERSION IEC SOT78 Fig 7. Package outline SOT78 (TO-220AB) BYQ28_SER_E_ED_4 Product data sheet ...

Page 7

... NXP Semiconductors Plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped DIMENSIONS (mm are the original dimensions) UNIT 2.38 0.93 0.89 1.1 mm 2.22 0.46 0.71 0.9 OUTLINE VERSION IEC SOT428 Fig 8. Package outline SOT428 (TO-252) BYQ28_SER_E_ED_4 Product data sheet BYQ28 series E and ED ...

Page 8

... Product specification Rev. 04 — 5 December 2007 BYQ28 series E and ED Rectifier diodes ultrafast, rugged Change notice Supersedes - BYQ28E_SERIES_3 row added. ESD ‘recovered charge’; t and t r rr1 rr2 - BYQ28E_SERIES_2 - BYQ28E_SERIES_1; BYQ28EB_SERIES_1 - - changed to t with rr © NXP B.V. 2007. All rights reserved ...

Page 9

... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 10

... NXP Semiconductors 11. Contents 1 Product profi 1.1 General description 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Limiting values Thermal characteristics Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8 9 Legal information 9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9 9.2 Defi ...

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