BYQ28E-200/H,127 NXP Semiconductors, BYQ28E-200/H,127 Datasheet - Page 3

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BYQ28E-200/H,127

Manufacturer Part Number
BYQ28E-200/H,127
Description
DIODE RECT UFAST 200V SOT78
Manufacturer
NXP Semiconductors
Datasheets

Specifications of BYQ28E-200/H,127

Package / Case
TO-220-3 (Straight Leads)
Voltage - Forward (vf) (max) @ If
1.25V @ 10A
Current - Reverse Leakage @ Vr
10µA @ 200V
Current - Average Rectified (io) (per Diode)
10A
Voltage - Dc Reverse (vr) (max)
200V
Reverse Recovery Time (trr)
25ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole
Product
Switching Diodes
Peak Reverse Voltage
200 V
Forward Continuous Current
10 A
Max Surge Current
55 A
Configuration
Dual Common Cathode
Recovery Time
25 ns
Forward Voltage Drop
1.25 V
Maximum Reverse Leakage Current
10 uA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 40 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934062725127
NXP Semiconductors
5. Thermal characteristics
Table 4.
[1]
BYQ28_SER_E_ED_4
Product data sheet
Symbol
R
R
Fig 1. Transient thermal impedance from junction to mounting base as a function of pulse width
th(j-mb)
th(j-a)
Z
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
(K/W)
th(j-mb)
10
10
10
10
1
1
2
3
10
Parameter
thermal resistance from junction to
mounting base
thermal resistance from junction to ambient in free air; SOT78
6
Thermal characteristics
10
5
10
4
Rev. 04 — 5 December 2007
10
3
Conditions
with heatsink compound;
per diode; see
with heatsink compound;
both diodes conducting
SOT428
10
BYQ28 series E and ED
2
Figure 1
10
Rectifier diodes ultrafast, rugged
1
[1]
Min
-
-
-
-
P
1
Typ
-
-
60
50
t
p
T
© NXP B.V. 2007. All rights reserved.
t
p
001aag979
(s)
Max
4.5
3
-
-
=
T
t
t
p
10
Unit
K/W
K/W
K/W
K/W
3 of 10

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