BYQ28E-200/H,127 NXP Semiconductors, BYQ28E-200/H,127 Datasheet - Page 5
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BYQ28E-200/H,127
Manufacturer Part Number
BYQ28E-200/H,127
Description
DIODE RECT UFAST 200V SOT78
Manufacturer
NXP Semiconductors
Specifications of BYQ28E-200/H,127
Package / Case
TO-220-3 (Straight Leads)
Voltage - Forward (vf) (max) @ If
1.25V @ 10A
Current - Reverse Leakage @ Vr
10µA @ 200V
Current - Average Rectified (io) (per Diode)
10A
Voltage - Dc Reverse (vr) (max)
200V
Reverse Recovery Time (trr)
25ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole
Product
Switching Diodes
Peak Reverse Voltage
200 V
Forward Continuous Current
10 A
Max Surge Current
55 A
Configuration
Dual Common Cathode
Recovery Time
25 ns
Forward Voltage Drop
1.25 V
Maximum Reverse Leakage Current
10 uA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 40 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934062725127
NXP Semiconductors
BYQ28_SER_E_ED_4
Product data sheet
Fig 3. Reverse recovery definitions
Fig 5. Forward power dissipation as a function of
I
I
R
F
P
(W)
tot
8
6
4
2
0
I
average forward current; square waveform;
maximum values
F(AV)
0
dl
dt
= I
F
F(RMS)
I
RM
Q
2
0.1
r
0.2
t
rr
4
0.5
6
I
F(AV)
001aag976
= 1
(A)
Rev. 04 — 5 December 2007
001aab911
10 %
8
time
100 %
Fig 4. Forward recovery definitions
Fig 6. Forward power dissipation as a function of
V
I
F
F
P
(W)
BYQ28 series E and ED
tot
6
4
2
0
a = form factor = I
average forward current; sinusoidal waveform;
maximum values
0
4.0
Rectifier diodes ultrafast, rugged
2
F(RMS)
2.8
2.2
/ I
F(AV)
1.9
4
a = 1.57
I
F(AV)
© NXP B.V. 2007. All rights reserved.
001aag977
(A)
V
F
6
001aab912
time
time
5 of 10
V
FR