BYV42E-200,127 NXP Semiconductors, BYV42E-200,127 Datasheet - Page 6

DIODE RECT DL UF 200V TO220AB

BYV42E-200,127

Manufacturer Part Number
BYV42E-200,127
Description
DIODE RECT DL UF 200V TO220AB
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BYV42E-200,127

Package / Case
TO-220AB-3
Voltage - Forward (vf) (max) @ If
1.2V @ 30A
Current - Reverse Leakage @ Vr
100µA @ 200V
Current - Average Rectified (io) (per Diode)
30A
Voltage - Dc Reverse (vr) (max)
200V
Reverse Recovery Time (trr)
28ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole
Product
Ultra Fast Recovery Rectifier
Configuration
Dual Common Cathode
Reverse Voltage
200 V
Forward Voltage Drop
1.2 V
Recovery Time
28 ns
Forward Continuous Current
30 A
Max Surge Current
160 A
Reverse Current Ir
100 uA
Mounting Style
Through Hole
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-3439-5
934013490127
BYV42E-200
Philips Semiconductors
MECHANICAL DATA
MOUNTING INSTRUCTIONS
Notes
1. Epoxy meets UL94 V0 at 1/8".
July 1998
Rectifier diodes
ultrafast, rugged
Dimensions in mm
Net Mass: 1.4 g
Dimensions in mm
2.54 (x2)
Fig.13. SOT404 : centre pin connected to mounting base.
Fig.14. SOT404 : soldering pattern for surface mounting .
10.3 max
9.0
0.85 max
(x2)
3.8
6
11 max
2.0
11.5
5.08
15.4
4.5 max
1.4 max
BYV42E, BYV42EB series
17.5
0.5
Product specification
2.5
Rev 1.200

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