BYT16P-400 STMicroelectronics, BYT16P-400 Datasheet - Page 2

• Manufacturer Part Number: BYT16P-400
• Description: DIODE FAST REC 16A 400V TO-220AB
• Manufacturer: STMicroelectronics

Specifications of BYT16P-400

• Voltage - Forward (vf) (max) @ If: 1.5V @ 8A
• Current - Reverse Leakage @ Vr: 15µA @ 400V
• Current - Average Rectified (io) (per Diode): 16A
• Voltage - Dc Reverse (vr) (max): 400V
• Reverse Recovery Time (trr): 75ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

BYT16P-400
THERMAL RESISTANCES
When the diodes 1 and 2 are used simultaneously:
STATIC ELECTRICAL CHARACTERISTICS
Pulse test : * tp = 380 s, < 2%
To evaluate the conduction losses use the following equation:
P = 1.1 x I
RECOVERY CHARACTERISTICS
TURN-OFF SWITCHING CHARACTERISTICS
Fig. 1: Low frequency power losses versus
average current.
2/5
Symbol
Symbol
Tj(diode 1) = P(diode) x R th(j-c) (Per diode) + P(diode 2) x R th(c)
R
Symbol
Symbol
C =
R
V
I
th(j-c)
R
th(c)
t
I
F
IRM
RM
t
**
rr
V
*
V
CC
RP
F(AV)
** tp = 5 ms, < 2%
Junction to case
Forward voltage drop
Reverse leakage
current
Tj = 25°C
Maximum reverse
recovery time
Maximum reverse
recovery current
Turn-off overvoltage
coefficient
+ 0.024 I
Parameter
Parameter
F
2
(RMS)
I
I
F
F
= 1A V
= 0.5A I
Test Conditions
Tj = 25 C
Tj = 100 C
Tj = 25 C
Tj = 100 C
Parameter
R
R
= 30V dI
dI
dI
dI
dI
Tj = 100°C
dI
(see fig. 12)
= 1A I
F
F
F
F
F
/dt = - 32 A/ s
/dt = - 64 A/ s
/dt = - 32 A/ s
/dt = - 64 A/ s
/dt = - 8A/ s
Test Conditions
rr
F
= 0.25A
/dt = - 15A/ s
Test Conditions
V
CC
I
V
Fig. 2: Peak current versus form factor.
F
R
Per diode
Total
Coupling
= 8 A
= 120V
= V
L
p
RRM
= 9 H
V
I
L
Tj = 100°C
(see fig. 11)
F
p
CC
= 8 A
I
F
= 200 V
0.05 H
= I
Min.
F(AV)
Min.
Typ.
Typ.
Value
Min. Typ. Max. Unit
3.75
0.25
2
Max.
2.8
3.3
50
1.5
1.4
2.5
15
Max.
75
35
2.2
75
Unit
Unit
C/W
mA
Unit
V
ns
A
ns
A
/