RB400VA-50TR Rohm Semiconductor, RB400VA-50TR Datasheet
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Manufacturer Part Number
RB400VA-50TR
Description
DIODE SCHOTTKY 40V 0.5A TUMD2
Manufacturer
Rohm Semiconductor
Specifications of RB400VA-50TR
Diode Type
Schottky
Voltage - Forward (vf) (max) @ If
550mV @ 500mA
Voltage - Dc Reverse (vr) (max)
40V
Current - Average Rectified (io)
500mA
Current - Reverse Leakage @ Vr
50µA @ 30V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F
125pF @ 0V, 1MHz
Mounting Type
Surface Mount
Package / Case
TUMD2
Repetitive Reverse Voltage Vrrm Max
50V
Forward Current If(av)
500mA
Forward Voltage Vf Max
550mV
Forward Surge Current Ifsm Max
3A
Operating Temperature Range
-40°C To +125°C
Diode
RoHS Compliant
Product
Schottky Diodes
Peak Reverse Voltage
50 V
Forward Continuous Current
0.5 A
Max Surge Current
3 A
Configuration
Single
Forward Voltage Drop
0.55 V
Maximum Reverse Leakage Current
50 uA @ 30 V
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Part Number:
RB400VA-50TR
Part Number:
RB400VA-50TR
Part Number:
RB400VA-50TR
Diodes
Schottky barrier diode
RB400VA-50
General rectification
1) Small mold type. (TUMD2)
2) Low I
3) High reliability.
Silicon epitaxial planar
Rev
Rev
A
Forward current surge peak （ 60Hz ・ 1cyc ）
J
S
F
R
C
unction temperature
orward voltage
Applications
Features
Construction
verage rectified forward current
Absolute maximum ratings (Ta=25°C)
torage temperature
Electrical characteristics (Ta=25°C)
everse current
apacitance between terminal
erse voltage (repetitive peak)
erse voltage (DC)
F
, Low I
Parameter
Parameter
R
.
ROHM : TUMD2
Symbol
External dimensions (Unit : mm)
Taping specifications (Unit : mm)
Symbol
V
Ct
Ct2
I
I
R
R
Tstg
F
dot (year week factory) + day
V
I
1
2
0.8±0.05
FSM
1
1
V
Io
Tj
1.3±0.05
RM
R
4.0±0.1
1.43±0.05
Min.
-
-
-
-
-
-40 to +125
2.0±0.05
Typ.
12
Limits
20
-
-
-
125
0.5
50
40
5
3
0.6±0.2
0.1
4.0±0.1
0.17±0.1
Max.
0.55
30
50
-
-
0.05
φ1.55±0.1
0
φ1.0±0.2
0
Unit
µA
µA
pF
pF
V
Unit
℃
℃
V
V
A
A
Structure
Land size figure (Unit : mm)
I
V
V
V
V
F
R
R
R
R
=500mA
TUMD2
=10V
=30V
=0V , f=1MHz
=10V , f=1MHz
1.1
0.25±0.05
Conditions
RB400VA-50
250
0.9±0.08
Rev.A
1/3
Related parts for RB400VA-50TR
RB400VA-50TR Summary of contents
... Tj -40 to +125 Tstg Symbol Min. Typ. Max 0. Ct2 - 20 - RB400VA-50 Land size figure (Unit : mm) 1.1 TUMD2 Structure 250 0.25±0.05 φ1.0±0.2 0 0.9±0.08 Unit ℃ ℃ Unit Conditions V I =500mA F µA V =10V R µA V =30V =0V , f=1MHz R pF ...
... AVE:0.510uA DISPERSION MAP 25 Ta=25℃ 24 f=1MHz 23 VR=10V n=10pcs AVE:20.66pF DISPERSION MAP 10 Ifsm 8 8.3ms 8.3ms 1cyc NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS RB400VA-50 1000 f=1MHz 100 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 10 Ta=25℃ 9 VR=35V 8 n=30pcs AVE:1.562uA DISPERSION MAP 30 1cyc Ifsm 8.3ms 20 10 AVE:5.30A 0 IFSM DISRESION MAP ...
... AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 1.5 t D=t/T VR=20V T Tj=125℃ D=1 0.5 Sin(θ＝180) 0 125 100 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) RB400VA-50 0.02 0.015 0.01 Sin(θ＝180) D=1/2 DC 0.005 REVERSE VOLTAGE:VR(V) VR-P CHARACTERISTICS 125 Rev.A 20 3/3 ...
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...
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