RB051L-40TE25 Rohm Semiconductor, RB051L-40TE25 Datasheet - Page 2

• Manufacturer Part Number: RB051L-40TE25
• Description: DIODE SCHOTTKY 20V 3A SOD106
• Manufacturer: Rohm Semiconductor

Specifications of RB051L-40TE25

• Diode Type: Schottky
• Voltage - Forward (vf) (max) @ If: 450mV @ 3A
• Voltage - Dc Reverse (vr) (max): 20V
• Current - Average Rectified (io): 3A
• Current - Reverse Leakage @ Vr: 1mA @ 20V
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: SOD-106, PMDS
• Repetitive Reverse Voltage Vrrm Max: 40V
• Forward Current If(av): 3A
• Forward Voltage Vf Max: 450mV
• Forward Surge Current Ifsm Max: 70A
• Operating Temperature Range: -40°C To +125°C
• Product: Schottky Diodes
• Peak Reverse Voltage: 40 V
• Forward Continuous Current: 3 A
• Max Surge Current: 70 A
• Configuration: Single
• Forward Voltage Drop: 0.45 V
• Maximum Reverse Leakage Current: 1000 uA @ 20 V
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: RB051L-40TE25TR

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RB051L-40
400
390
380
370
360
350
0.001
300
250
200
150
100
0.01
50
300
250
200
150
100
0.1
10
0
50
0
1
0
1
Ta=125℃
FORWARD VOLTAGE：VF(mV)
100
IFSM-t CHARACTERISTICS
VF-IF CHARACTERISTICS
VF DISPERSION MAP
IFSM DISRESION MAP
Ta=75℃
200
AVE:383.2mV
TIME:t(ms)
AVE:186.0A
300
10
Ifsm
400
Ifsm
Ta=-25℃
Ta=25℃
8.3ms
Ta=25℃
n=30pcs
IF=3A
500
t
1cyc
600
100
1000000
1000
100000
1000
100
10000
0.1
900
800
700
600
500
400
300
200
100
30
25
20
15
10
10
1000
5
0
1
0.001
100
0
10
1
0
Mounted on epoxy board
5
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
Rth-t CHARACTERISTICS
trr DISPERSION MAP
IR DISPERSION MAP
10
0.1
15
AVE:11.6ns
TIME:t(s)
AVE:110.0uA
IM=100mA
2/3
20
1ms
300us
25
10
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
time
Irr=0.25*IR
30
Ta=25℃
n=10pcs
IF=0.5A
IR=1A
Rth(j-a)
Rth(j-c)
IF=1A
Ta=25℃
VR=20V
n=30pcs
35
1000
40
1000
900
890
880
870
860
850
840
830
820
810
800
300
250
200
150
100
3
2
1
0
100
50
10
0
0
1
0
IFSM-CYCLE CHARACTERISTICS
1
FORWARD CURRENT：Io(A)
5
VR-Ct CHARACTERISTICS
REVERSE VOLTAGE:VR(V)
Io-Pf CHARACTERISTICS
Sin(θ＝180)
AVERAGE RECTIFIED
Ct DISPERSION MAP
NUMBER OF CYCLES
10
2
AVE:850.8pF
Ifsm
15
10
3
8.3ms
20
2011.04 - Rev.B
1cyc
f=1MHｚ
D=1/2
Ta=25℃
n=10pcs
f=1MHz
VR=0V
4
8.3ms
25
Data Sheet
DC
30
100
5