TMMBAT41FILM STMicroelectronics, TMMBAT41FILM Datasheet

DIODE SCHTKY 100MA 100V MINIMELF

TMMBAT41FILM

Manufacturer Part Number
TMMBAT41FILM
Description
DIODE SCHTKY 100MA 100V MINIMELF
Manufacturer
STMicroelectronics
Datasheet

Specifications of TMMBAT41FILM

Voltage - Forward (vf) (max) @ If
450mV @ 1mA
Voltage - Dc Reverse (vr) (max)
100V
Current - Average Rectified (io)
100mA (DC)
Current - Reverse Leakage @ Vr
100nA @ 50V
Diode Type
Schottky
Speed
Small Signal =< 200mA (Io), Any Speed
Capacitance @ Vr, F
2pF @ 1V, 1MHz
Mounting Type
Surface Mount
Package / Case
Mini MELF
Product
Schottky Diodes
Peak Reverse Voltage
100 V
Forward Continuous Current
0.1 A
Max Surge Current
0.75 A
Configuration
Single
Forward Voltage Drop
1 V at 0.2 A
Maximum Reverse Leakage Current
0.1 uA at 50 V
Operating Temperature Range
- 65 C to + 125 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-7669-2
TMMBAT41FILM

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Price
Part Number:
TMMBAT41FILM
Manufacturer:
ST
0
ABSOLUTE RATINGS (limiting values)
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
DYNAMIC CHARACTERISTICS
* Pulse test: t
DESCRIPTION
General purpose metal to silicon diode featuring
very low turn-on voltage and fast switching.
This device has integrated protection against ex-
cessive voltage such as electrostatic discharges.
THERMAL RESISTANCE
August 1999 Ed: 1A
Symbol
Symbol
Symbol
Symbol
V
R
I
I
T
V
P
V
FRM
FSM
T
I
RRM
T
I
th(j-l)
C
R
stg
F
tot
BR
F
L
j
*
*
p
®
Repetitive Peak Reverse Voltage
Forward Continuous Current
Repetitive Peak Forward Current
Surge non Repetitive Forward Current
Power Dissipation
Storage and Junction Temperature Range
Maximum Temperature for Soldering during 15s
300 s
T
T
T
T
T
T
Junction-leads
j
j
j
j
j
j
= 25 C
= 25 C
= 25 C
= 25 C
= 100 C
= 25 C
2%.
Test Conditions
I
I
I
V
R
F
F
R
Test Conditions
Test Conditions
= 1mA
= 200mA
= 100 A
= 1V
Parameter
SMALL SIGNAL SCHOTTKY DIODE
f = 1MHz
T
t
t
T
p
p
i
i
= 10ms
= 25 C
= 95 C
0.5
1s
V
R
= 50V
Min.
Min.
100
MINIMELF
(Glass)
- 65 to + 150
- 65 to + 125
TMMBAT 41
Value
Value
Typ.
Typ.
100
100
350
750
100
260
300
0.4
2
Max.
Max.
0.45
0.1
20
1
Unit
Unit
Unit
mW
Unit
mA
mA
mA
C/W
pF
V
V
V
C
C
C
A
1/4

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TMMBAT41FILM Summary of contents

Page 1

DESCRIPTION General purpose metal to silicon diode featuring very low turn-on voltage and fast switching. This device has integrated protection against ex- cessive voltage such as electrostatic discharges. ABSOLUTE RATINGS (limiting values) Symbol V Repetitive Peak Reverse Voltage RRM ...

Page 2

TMMBAT 41 Figure 1. Forward current versus forward voltage at different temperatures (typical values). Figure 3. Reverse current versus junction temperature. 2/4 Figure 2. Forward current versus forward voltage (typical values). Figure 4. Reverse current versus continuous reverse voltage (typical ...

Page 3

Figure 5. Capacitance C versus reverse applied voltage V (typical values). R TMMBAT 41 3/4 ...

Page 4

... No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. ...

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