TMMBAT48FILM STMicroelectronics, TMMBAT48FILM Datasheet

DIODE SCHOTTKY 40V330MW MINIMELF

TMMBAT48FILM

Manufacturer Part Number
TMMBAT48FILM
Description
DIODE SCHOTTKY 40V330MW MINIMELF
Manufacturer
STMicroelectronics
Datasheet

Specifications of TMMBAT48FILM

Voltage - Forward (vf) (max) @ If
750mV @ 200mA
Voltage - Dc Reverse (vr) (max)
40V
Current - Average Rectified (io)
350mA (DC)
Current - Reverse Leakage @ Vr
25µA @ 40V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
10ns
Capacitance @ Vr, F
20pF @ 0V, 1MHz
Mounting Type
Surface Mount
Package / Case
Mini MELF
Product
Schottky Diodes
Peak Reverse Voltage
40 V
Forward Continuous Current
0.35 A
Max Surge Current
7.5 A
Configuration
Single
Recovery Time
10 ns
Forward Voltage Drop
0.9 V at 0.5 A
Maximum Reverse Leakage Current
25 uA
Operating Temperature Range
- 65 C to + 125 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-3274-2

Available stocks

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Part Number
Manufacturer
Quantity
Price
Part Number:
TMMBAT48FILM
Manufacturer:
STM
Quantity:
5 874
Part Number:
TMMBAT48FILM
Manufacturer:
ST
Quantity:
20 000
Part Number:
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STM
Quantity:
5 128
DESCRIPTION
General purpose, metal to silicon diodes featuring
very low turn-on voltage and fast switching.
These devices have integrated protection against
excessive voltage such as electrostatic discharges.
ABSOLUTE RATINGS (limiting values)
THERMAL RESISTANCE
August 1999 Ed: 1A
Symbol
Symbol
R
V
I
I
T
th(j-l)
P
FRM
FSM
T
RRM
T
I
stg
F
tot
L
j
®
Junction-leads
Repetitive Peak Reverse Voltage
Forward Continuous Current
Repetitive Peak Fordward Current
Surge non Repetitive Forward Current
Power Dissipation
Storage and Junction Temperature Range
Maximum Temperature for Soldering during 15s
Test Conditions
Parameter
SMALL SIGNAL SCHOTTKY DIODES
T
t
t
t
T
p
p
p
l
l
= 10ms
= 1s
= 25 C
= 25 C
0.5
1s
TMMBAT47
MINIMELF
20
(Glass)
- 65 to 150
- 65 to 125
TMMBAT 47
TMMBAT 48
Value
260
300
350
330
7.5
1.5
1
TMMBAT48
40
Unit
Unit
mW
C/W
mA
V
A
A
C
C
C
1/5

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TMMBAT48FILM Summary of contents

Page 1

DESCRIPTION General purpose, metal to silicon diodes featuring very low turn-on voltage and fast switching. These devices have integrated protection against excessive voltage such as electrostatic discharges. ABSOLUTE RATINGS (limiting values) Symbol V Repetitive Peak Reverse Voltage RRM I ...

Page 2

TMMBAT 47/TMMBAT 48 ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol ...

Page 3

Figure 1. Forward current versus forward voltage at different temperatures (typical values). Figure 3. Reverse current versus junction temperature. TMMBAT 47/TMMBAT 48 Figure 2. Forward current versus forward voltage (typical values). Figure 4. Reverse current versus continuous reverse voltage (typical ...

Page 4

TMMBAT 47/TMMBAT 48 Figure 5. Capacitance C versus reverse applied voltage V 4/5 (typical values). R ...

Page 5

... No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. ...

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