SMBYT01-400 STMicroelectronics, SMBYT01-400 Datasheet
SMBYT01-400
Specifications of SMBYT01-400
Available stocks
Related parts for SMBYT01-400
SMBYT01-400 Summary of contents
Page 1
... Storage and junction temperature range Tj Symbol V RRM Repetitive peak reverse voltage THERMAL RESISTANCE Symbol R Junction-leads th (j-l) October 1999 - Ed: 2A FAST RECOVERY RECTIFIER DIODES Parameter Parameter Parameter SMBYT01 SMB (Plastic) Value Unit 10 Tl=110 0.5 tp=10ms 30 sinusoidal - 150 - 150 Value Unit 400 ...
Page 2
... SMBYT01 STATIC ELECTRICAL CHARACTERISTICS Symbol 100 100 C j Pulse test : * tp = 380 s, < ms, < RECOVERY CHARACTERISTICS Symbol trr TURN-OFF SWITCHING CHARACTERISTICS (Without serie inductance) Symbol 200V IRM 100 evaluate the conduction losses use the following equation : 1 0. F(AV) F (RMS) Voltage (V) Marking Laser marking ...
Page 3
... I F(av)(A) 1.2 1.0 0.8 0.6 0.4 0.2 0 =tp/T P=0.5W P=1.5W P=2.5W Zth(j-c) (tp. ) Rth(j- Single pulse tp(s) 0.01 0.1 6: Average current versus Rth(j-a)=Rth(j-l) o Rth(j-a)=75 C/W 2 1cm Cu =0.5 T =tp/T tp Tamb 100 120 SMBYT01 1.0 T =tp ambient 140 160 3/5 ...
Page 4
... SMBYT01 Fig. 7: Recovery time versus dI Fig. 9: Peak reverse current versus dIF/dt. Fig. 11: Dynamic parameters versus junction temperature. 4/5 /dt. Fig. 8: Peak forward voltage versus dI F Fig. 10: Recovery charge versus dIF/dt. (typical values) Fig. 12: Thermal resistance junction to ambient versus copper surface under each lead. ...
Page 5
... Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. REF Laser marking Weight = 0.12 g. Logo indicates cathode 2.3 1.52 STMicroelectronics GROUP OF COMPANIES http://www.st.com SMBYT01 DIMENSIONS Millimeters Inches Min. Max. Min. Max. 1.90 2.45 0.075 0.096 0.05 0.20 0.002 0.008 1.95 2.20 0.077 0.087 ...