STTH810G-TR STMicroelectronics, STTH810G-TR Datasheet - Page 3

• Manufacturer Part Number: STTH810G-TR
• Description: DIODE ULT FAST 1000V 8A D2PAK
• Manufacturer: STMicroelectronics

Specifications of STTH810G-TR

• Voltage - Forward (vf) (max) @ If: 2V @ 8A
• Voltage - Dc Reverse (vr) (max): 1000V (1kV)
• Current - Average Rectified (io): 8A
• Current - Reverse Leakage @ Vr: 5µA @ 1000V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 85ns
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 100 V
• Forward Voltage Drop: 2 V
• Recovery Time: 85 ns
• Forward Continuous Current: 8 A
• Max Surge Current: 60 A
• Reverse Current Ir: 5 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-8054-2; STTH810G-TR

STTH810
Table 4.
Figure 1.
Figure 3.
Symbol
V
I
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
18
16
14
12
10
RM
t
t
S
8
6
4
2
0
FP
1.E-03
rr
fr
0
P(W)
Z
th(j-c)
Single pulse
DO-220AB
D²PAK
1
Reverse recovery time
Reverse recovery current
Softness factor
Forward recovery time
Forward recovery voltage
/R
th(j-c)
Dynamic characteristics
Conduction losses versus
average current
Relative variation of thermal
impedance junction to case
versus pulse duration
2
1.E-02
3
=0.05
Parameter
4
I
F(AV)
=0.1
5
(A)
t (s)
=0.2
p
6
1.E-01
7
=0.5
8
T
I
V
I
V
I
V
I
V
I
V
I
T
F
F
F
F
F
F
9
j
R
R
R
R
FR
= 1 A, dI
= 1 A, dI
= 8 A, dI
= 8 A, dI
= 8 A
= 8 A, dI
= 25° C
1.E+00
=1
= 30 V, T
= 30 V, T
= 600 V, T
= 600 V, T
= 1.5 x V
10
Test conditions
F
F
F
F
F
dI
Figure 2.
Figure 4.
/dt = -50 A/µs,
/dt = -100 A/µs,
/dt = -200 A/µs,
/dt = -200 A/µs,
/dt = 50 A/µs,
j
j
= 25° C
= 25° C
F
Fmax
j
j
/dt = 50 A/µs
= 125° C
= 125° C
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
80
70
60
50
40
30
20
10
0
1.E-03
0.0
Z
, T
I
FM
th(j-c)
TO-220FPAB
Single pulse
j
(A)
0.5
= 25° C
/R
th(j-c)
forward current
impedance junction to case versus
pulse duration
Forward voltage drop versus
Relative variation of thermal
1.0
(Maximum values)
1.E-02
T
(Typical values)
j
=150°C
1.5
T
j
=150°C
2.0
1.E-01
2.5
Min.
t (s)
3.0
p
Typ
5.5
V
64
47
12
(Maximum values)
2
FM
3.5
1.E+00
Characteristics
(V)
T
j
=25°C
4.0
Max.
300
85
65
16
4.5
1.E+01
Unit
5.0
ns
ns
A
V
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