RB160A40T-32 Rohm Semiconductor, RB160A40T-32 Datasheet
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Manufacturer Part Number
RB160A40T-32
Description
DIODE SCHOTTKY 40V 1A AXIAL MSR
Manufacturer
Rohm Semiconductor
Specifications of RB160A40T-32
Voltage - Forward (vf) (max) @ If
510mV @ 1A
Voltage - Dc Reverse (vr) (max)
40V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
30µA @ 40V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Through Hole
Package / Case
DO-204AL, DO-41, Axial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Diodes
Schottky barrier diode
RB160A40
General rectification
1) Cylindrical mold type. (MSR)
2) High I surge capability.
3) Low I
4) High ESD.
Silicon epitaxial planar
Forward voltage
Reverse current
ESD break down voltage
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current (*1)
Forward current surge peak （t=100µs）
Junction temperature
Storage temperature
(*1) Mounted on epoxy board. 180°Half sine wave
Features
Construction
Electrical characteristics (Ta=25°C)
Applications
Absolute maximum ratings (Ta=25°C)
R
Parameter
.
Parameter
Symbol
ESD
V
I
R
F
Min.
0.36
20
-
Symbol
Tstg
V
I
V
FSM
Io
Tj
RM
R
Taping specifications (Unit : mm)
Typ.
0.46
4.00
Dimensions (Unit : mm)
H1
ROHM : MSR
H2
-
①
Max.
0.51
BLUE
30
L1
-
②
-55 to +150
29±1
Limits
A
150
40
40
50
1
Manufacture Date
Unit
µA
kV
V
F
E
L2
3.0±0.2
I
V
C=100pF,R=1.5kΩ, forward and reverse : 1 time
F
R
=1.0A
=40V
CATHODE BAND
Unit
℃
℃
V
V
A
A
C
D
B
BROWN
＊H1(6mm)：BROWN
Symbol
|L1-L2|
29±1
H1
H2
Conditions
φ0.6±0.1
Ａ
B
C
D
Ｆ
E
T-31 52.4±1.5
T-32
T-31 5.0±0.5
T-31
T-31
T-32
T-31
T-32
T-31
T-32
T-31
T-32
T-31
T-32
T-31
T-32
T-31
T-32
Standard dimension
Rev.B
value(mm)
RB160A40
26.0
5.0±0.3
1.0 max.
1/2A±1.2
1/2A±0.4
±0.7
0.2 max.
6.0±0.5
5.0±0.5
1.5 max.
0.4 max.
0
+0.4
0
φ2.5±0.2
1/3
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RB160A40T-32 Summary of contents
Diodes Schottky barrier diode RB160A40 Applications General rectification Features 1) Cylindrical mold type. (MSR) 2) High I surge capability. 3) Low High ESD. Construction Silicon epitaxial planar Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) ...
Diodes Electrical characteristic curves (Ta=25°C) 1000 Ta=75℃ Ta=125℃ 100 Ta=150℃ Ta=25℃ Ta=-25℃ 100 200 300 400 500 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 480 Ta=25℃ IF=1A 470 n=30pcs 460 450 AVE:454.3mV 440 430 VF DISPERSION MAP 200 1cyc Ifsm ...
Diodes 0.05 0.04 0.03 DC 0.02 D=1/2 0.01 Sin(θ＝180 REVERSE VOLTAGE:VR(V) VR-P CHARACTERISTICS break at 30kV AVE:7.30kV 0 C=200pF C=100pF R=0Ω R=1.5kΩ ESD DISPERSION MAP 3 Io ...
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...
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