RF101A2ST-32 Rohm Semiconductor, RF101A2ST-32 Datasheet - Page 2

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RF101A2ST-32

Manufacturer Part Number
RF101A2ST-32
Description
DIODE FAST REC 200V 1.0A DO-41
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of RF101A2ST-32

Voltage - Forward (vf) (max) @ If
870mV @ 1A
Voltage - Dc Reverse (vr) (max)
200V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
10µA @ 200V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
25ns
Mounting Type
Through Hole
Package / Case
DO-204AL, DO-41, Axial
Product
Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
200 V
Forward Voltage Drop
0.87 V
Recovery Time
25 ns
Forward Continuous Current
1 A
Max Surge Current
20 A
Reverse Current Ir
10 uA
Mounting Style
Through Hole
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
 Details
Other names
RF101A2ST-32TB
Diodes
Electrical characteristic curves
0.001
1000
0.01
200
150
100
100
850
840
830
820
810
800
0.1
50
10
0
1
0
1
100 200 300 400 500 600 700 800 900
Ta=75℃
FORWARD VOLTAGE:VF(mV)
Ta=125℃
IFSM-t CHARACTERISTICS
VF-IF CHARACTERISTICS
IFSM DISPERSION MAP
Ta=150℃
VF DISPERSION MAP
AVE:818.6mV
AVE:63.0A
TIME:t(ms)
10
Ifsm
Ifsm
8.3ms
Ta=-25℃
Ta=25℃
t
Ta=25℃
n=30pcs
IF=1A
1cyc
100
10000
1000
100
1000
0.01
100
90
80
70
60
50
40
30
20
10
30
25
20
15
10
100
0.1
10
0
5
0
10
1
1
0.001
0
IM=1mA
Mounted on epoxy board
IF=0.5A
0.01
td=300us
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
Rth-t CHARACTERISTICS
50
trr DISPERSION MAP
IR DISPERSION MAP
time(s)
0.1
AVE:11.1nA
AVE:12.2ns
TIME:t(s)
Ta=150℃
100
1
Rth(j-l)
10
Ta=75℃
Ta=25℃
Ta=-25℃
Irr=0.25*IR
150
Ta=25℃
n=10pcs
VR=200V
IF=0.5A
Ta=25℃
Ta=125℃
n=30pcs
IR=1A
Rth(j-c)
100
Rth(j-a)
1000
200
100
1000
100
90
80
70
60
50
40
30
20
10
100
10
0
10
1
1
1.5
0.5
0
1
2
1
0
0
IFSM-CYCLE CHARACTERISTICS
5
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
Sin(θ=180)
NUMBER OF CYCLES
Ct DISPERSION MAP
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
0.5
10
AVERAGE RECTIFIED
Rev.C
AVE:51.4pF
RF101A2S
15
Ifsm
10
1
D=1/2
20
8.3ms
f=1MHz
1cyc
f=1MHz
1.5
25
Ta=25℃
n=10pcs
8.3ms
f=1MHz
VR=0V
DC
2/3
30
100
2

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