BYW29E-100,127 NXP Semiconductors, BYW29E-100,127 Datasheet - Page 4

DIODE RECT 100V 8A SOD59

BYW29E-100,127

Manufacturer Part Number
BYW29E-100,127
Description
DIODE RECT 100V 8A SOD59
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BYW29E-100,127

Package / Case
TO-220AC-2
Voltage - Forward (vf) (max) @ If
1.05V @ 8A
Voltage - Dc Reverse (vr) (max)
100V
Current - Average Rectified (io)
8A
Current - Reverse Leakage @ Vr
10µA @ 100V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
25ns
Mounting Type
Through Hole
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
100 V
Forward Voltage Drop
1.3 V at 20 A
Recovery Time
25 ns
Forward Continuous Current
8 A
Max Surge Current
88 A
Reverse Current Ir
10 uA
Mounting Style
Through Hole
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934011640127
BYW29E-100
BYW29E-100
Philips Semiconductors
August 2001
Rectifier diodes
ultrafast, rugged
Fig.9. Typical and maximum forward characteristic
1000
0.01
30
20
10
100
0.1
0
10
10
1
1
0
1
IF / A
1
trr / ns
Irrm / A
Tj=150 C
Tj=25 C
Fig.8. Maximum I
Fig.7. Maximum t
I
F
0.5
= f(V
typ
F
); parameter T
dIF/dt (A/us)
-dIF/dt (A/us)
IF=1A
VF / V
10
10
1
rrm
rr
IF=10A
at T
IF=10A
at T
j
j
= 25 ˚C.
= 25 ˚C.
1.5
j
max
IF=1A
BYW29
100
100
2
4
Fig.11. Transient thermal impedance; Z
0.001
100
1.0
0.01
10
0.1
10
1.0
1
1us
Qs / nC
Transient thermal impedance, Zth j-mb (K/W)
Fig.10. Maximum Q
10us
100us
pulse width, tp (s)
IF=10A
-dIF/dt (A/us)
1ms
5A
2A
1A
10
P
D
10ms 100ms
s
at T
BYW29E series
t
p
Product specification
T
j
= 25 ˚C.
D =
PBYL1025
t
T
p
t
1s
th j-mb
Rev 1.400
100
= f(t
10s
p
).

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