STTH803G-TR STMicroelectronics, STTH803G-TR Datasheet
STTH803G-TR
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STTH803G-TR Summary of contents
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... Non repetitive avalanche current RSM T stg Storage temperature range Tj Maximum operating junction temperature October 1999 - Ed 300 V 175 ° PAK this device is Parameter Tc = 150 sinusoidal square STTH803D TO-220AC D STTH803D STTH803G Value 300 0.5 100 4 -65 +175 + 175 A N.C. 2 PAK Unit °C 1/6 ...
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STTH803D/G THERMAL RESISTANCES Symbol R Junction to case th (j-c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter I * Reverse leakage R current V ** Forward voltage drop F Pulse test : * ms, < ...
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Fig. 1: Conduction losses versus average current. P1( 0.2 = 0 IF(av) ( Fig. 3: Relative variation of thermal impedance junction to case ...
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STTH803D/G Fig. 7: Relative variation of dynamic parameters versus junction temperature (reference 125°C). 2.6 2.4 2.2 S factor 2.0 1.8 1.6 1.4 1.2 1.0 0.8 IRM 0.6 0.4 0.2 Tj(°C) 0 Fig. 9: Forward recovery ...
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PACKAGE MECHANICAL DATA 2 D PAK FLAT ZONE NO LESS THAN 2mm FOOT PRINT DIMENSIONS (in millimeters PAK 16.90 10.30 8.90 REF ...
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... G Ordering code Marking STTH803D STTH803D STTH803G STTH803G Cooling method: by conduction (C) Recommended torque value (TO-220AC): 0.55 N.m. Maximum torque value (TO-220AC): 0.70 N.m. Epoxy meets UL 94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics ...