STTH802FP STMicroelectronics, STTH802FP Datasheet - Page 4

• Manufacturer Part Number: STTH802FP
• Description: DIODE ULT FAST 200V 8A TO220FPAC
• Manufacturer: STMicroelectronics

Specifications of STTH802FP

• Voltage - Forward (vf) (max) @ If: 1.05V @ 8A
• Voltage - Dc Reverse (vr) (max): 200V
• Current - Average Rectified (io): 8A
• Current - Reverse Leakage @ Vr: 6µA @ 200V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 30ns
• Mounting Type: Through Hole
• Package / Case: TO-220-2 Full Pack, ITO-220AC
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 200 V
• Forward Voltage Drop: 1.05 V
• Recovery Time: 30 ns
• Forward Continuous Current: 8 A
• Max Surge Current: 100 A
• Reverse Current Ir: 6 uA
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-5285-5

Characteristics
4/11
Figure 5.
Figure 7.
Figure 9.
160
140
120
100
1.0
0.1
0.0
12
10
80
60
40
20
8
6
4
2
0
1.E-03
0
10
10
V
TO-220FPAC
Single pulse
R
I
F
=160V
V
=8A
R
I
F
=160V
=8A
Relative variation of thermal
impedance, junction to case,
versus pulse duration
(TO-220FPAC)
Reverse recovery charges versus
dI
Peak reverse recovery current
versus dI
1.E-02
F
/dt (typical values)
F
/dt (typical values)
1.E-01
100
100
T
T
j
T
=125°C
j
=125°C
j
T
=25°C
j
=25°C
1.E+00
dI
dI
F
/dt(A/µs)
F
/dt(A/µs)
tp(s)
1.E+01
1000
1000
Figure 6.
Figure 8.
Figure 10. Dynamic parameters versus
100
80
70
60
50
40
30
20
10
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
10
0
10
25
1
V
R
I
F
=160V
=8A
Junction capacitanceversus
reverse applied voltage (typical
values)
Reverse recovery time versus dI
(typical values)
junction temperature
50
I
RM
10
Q
RR
75
100
T
T
j
=125°C
j
=25°C
100
100
125
V
dI
osc
F=1MHz
T
F
V
=30mV
/dt(A/µs)
j
=25°C
R
I
F
=160V
T
=8A
j
(°C)
V
STTH802
RMS
R
(V)
1000
1000
150
F
/dt