SMBYW02-200 STMicroelectronics, SMBYW02-200 Datasheet - Page 3

• Manufacturer Part Number: SMBYW02-200
• Description: DIODE FAST REC 200V 2A SMB
• Manufacturer: STMicroelectronics

Specifications of SMBYW02-200

• Voltage - Forward (vf) (max) @ If: 1.25V @ 6A
• Voltage - Dc Reverse (vr) (max): 200V
• Current - Average Rectified (io): 2A
• Current - Reverse Leakage @ Vr: 10µA @ 200V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Other names: 497-2511-2

Fig. 3: Non repetitive surge peak forward current
versus overload duration.
20.0
17.5
15.0
12.5
10.0
Fig. 1: Low frequency power losses versus
average current.
2.5
2.0
1.5
1.0
0.5
0.0
Fig. 5: Voltage drop versus forward current
(maximum values).
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
7.5
5.0
2.5
0.0
0.001
0.0
0.1
P F(av)(W)
V FM(V)
I M(A)
Tl=100 C
0.4
o
0.01
=0.05
0.8
I F(av)(A)
t(s)
1
=0.1
1.2
0.1
I FM(A)
=0.2
1.6
IM
=tp/T
1
=0.5
2.0
Tc=100 C
Tc=25 C
Tc=70 C
10
T
t
=0.5
o
o
o
=1
tp
2.4
10
20
Fig. 2: Peak current versus form factor.
60
50
40
30
20
10
Fig. 4: Relative variation of thermal impedance
junction to lead versus pulse duration.
0.01
Fig.
temperature ( =0.5).
2.5
2.0
1.5
1.0
0.5
0.0
0
0.1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0.001
1
I M(A)
0
I
K
F(av)(A)
K =
= 0 . 1
=0.5
= 0 . 2
6:
Single pulse
=tp/T
Zth(j-c) (tp. )
20
P=1.5W
P=0.5W
Rth(j-c)
Average
T
0.01
40
P=2.5W
Rth(j-a)=75
tp
60
1cm Cu
current
= 0 . 5
2
Tamb( C)
80
0.1
tp(s)
o
C/W
Rth(j-a)=Rth(j-l)
o
100
SMBYW02-200
versus
=tp/T
120
1
=tp/T
T
140
tp
ambient
T
I
M
tp
160
10
3/5