IRG4PH40UDPBF International Rectifier, IRG4PH40UDPBF Datasheet - Page 7

IGBT W/DIODE 1200V 30A TO247AC

IRG4PH40UDPBF

Manufacturer Part Number
IRG4PH40UDPBF
Description
IGBT W/DIODE 1200V 30A TO247AC
Manufacturer
International Rectifier
Type
Ultrafastr

Specifications of IRG4PH40UDPBF

Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.1V @ 15V, 21A
Current - Collector (ic) (max)
41A
Power - Max
160W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Channel Type
N
Configuration
Single
Collector-emitter Voltage
1.2kV
Gate To Emitter Voltage (max)
±20V
Package Type
TO-247AC
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Capacitance, Gate
1800 pF
Current, Collector
41 A
Energy Rating
3.73 mJ
Polarity
N-Channel
Power Dissipation
160 W
Resistance, Thermal, Junction To Case
0.77 °C/W
Speed, Switching
40 kHz (Hard Switching), >200 kHz (Resonant Mode)
Voltage, Collector To Emitter Shorted
1200 V
Voltage, Collector To Emitter, Saturation
2.97 V
Transistor Type
IGBT
Dc Collector Current
41A
Collector Emitter Voltage Vces
1.2kV
Power Dissipation Pd
160W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Compliant
Other names
*IRG4PH40UDPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRG4PH40UDPBF
Manufacturer:
NXP
Quantity:
3 000
www.irf.com
Fig. 14 - Typical Reverse Recovery vs. di
Fig. 16 - Typical Stored Charge vs. di
6 0 0
5 0 0
4 0 0
3 0 0
2 0 0
1 0 0
2 0 0
1 6 0
1 2 0
8 0
4 0
0
0
1 0 0
1 0 0
V = 2 0 0 V
T = 1 2 5 °C
T = 2 5 °C
R
J
J
I = 16 A
F
I = 8 .0A
d i /d t - (A /µ s)
F
d i /d t - (A /µ s)
I = 4 .0A
f
F
f
I = 1 6 A
F
V = 2 0 0 V
T = 1 2 5 °C
T = 2 5 °C
R
J
J
I = 8 .0 A
F
I = 4 .0A
F
f
/dt
f
/dt
1 0 0 0
1 0 0 0
Fig. 15 - Typical Recovery Current vs. di
1 0 0 0
1 0 0
1 0 0
1 0
Fig. 17 - Typical di
1 0
1
1 0 0
1 0 0
I = 4 .0 A
IRG4PH40UDPbF
F
V = 2 0 0 V
T = 1 2 5 °C
T = 2 5 °C
I = 8.0 A
F
R
J
J
I = 4 .0A
F
di /dt - (A /µs)
I = 8.0A
di /dt - (A /µs)
F
f
f
(rec)M
V = 2 0 0 V
T = 1 2 5 °C
T = 2 5 °C
I = 1 6A
F
R
J
J
/dt vs. di
I = 1 6A
F
f
/dt
f
/dt
1 0 0 0
7
1 0 0 0

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