IXGH42N30C3 IXYS, IXGH42N30C3 Datasheet - Page 4
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IXGH42N30C3
Manufacturer Part Number
IXGH42N30C3
Description
IGBT HI SPEED 300V 42A TO-247
Manufacturer
IXYS
Series
GenX3™r
Datasheet
1.IXGH42N30C3.pdf
(6 pages)
Specifications of IXGH42N30C3
Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
300V
Vce(on) (max) @ Vge, Ic
1.85V @ 15V, 42A
Current - Collector (ic) (max)
42A
Power - Max
223W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247AD
Channel Type
N
Configuration
Single
Collector Current (dc) (max)
42A
Gate To Emitter Voltage (max)
±20V
Package Type
TO-247AD
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Vces, (v)
300
Ic25, Tc=25°c, Igbt, (a)
250
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
42
Vce(sat), Max, Tj=25°c, Igbt, (v)
1.8
Tfi, Typ, Tj=25°c, Igbt, (ns)
65
Eoff, Typ, Tj=125°c, Igbt, (mj)
0.2
Rthjc, Max, Igbt, (°c/w)
0.56
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IXYS reserves the right to change limits, test conditions, and dimensions.
10,000
1,000
1.00
0.10
0.01
100
60
55
50
45
40
35
30
25
20
15
10
10
0.00001
5
0
0
0
f = 1 MHz
20
5
Fig. 7. Transconductance
10
40
Fig. 9. Capacitance
0.0001
15
I
60
C
V
CE
- Amperes
20
- Volts
80
25
Fig. 11. Maximum Transient Thermal Impedance
100
0.001
T
30
J
C ies
C oes
C res
= - 40ºC
125ºC
25ºC
120
35
Pulse Width - Seconds
140
40
0.01
16
14
12
10
90
80
70
60
50
40
30
20
10
8
6
4
2
0
0
50
0
T
R
dV / dt < 10V / ns
Fig. 10. Reverse-Bias Safe Operating Area
V
I
I
J
G
C
G
CE
= 125ºC
= 10 Ω
= 42A
= 10 mA
10
= 150V
IXGA42N30C3 IXGH42N30C3
100
0.1
20
Fig. 8. Gate Charge
Q
150
30
G
V
- NanoCoulombs
CE
- Volts
40
200
50
1
IXGP42N30C3
250
60
70
300
10
80