IXGH42N30C3 IXYS, IXGH42N30C3 Datasheet - Page 5
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IXGH42N30C3
Manufacturer Part Number
IXGH42N30C3
Description
IGBT HI SPEED 300V 42A TO-247
Manufacturer
IXYS
Series
GenX3™r
Datasheet
1.IXGH42N30C3.pdf
(6 pages)
Specifications of IXGH42N30C3
Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
300V
Vce(on) (max) @ Vge, Ic
1.85V @ 15V, 42A
Current - Collector (ic) (max)
42A
Power - Max
223W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247AD
Channel Type
N
Configuration
Single
Collector Current (dc) (max)
42A
Gate To Emitter Voltage (max)
±20V
Package Type
TO-247AD
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Vces, (v)
300
Ic25, Tc=25°c, Igbt, (a)
250
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
42
Vce(sat), Max, Tj=25°c, Igbt, (v)
1.8
Tfi, Typ, Tj=25°c, Igbt, (ns)
65
Eoff, Typ, Tj=125°c, Igbt, (mj)
0.2
Rthjc, Max, Igbt, (°c/w)
0.56
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
© 2008 IXYS CORPORATION, All rights reserved
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
170
160
150
140
130
120
110
100
90
80
70
60
50
25
10
20
Energy Loss vs. Junction Temperature
15
Switching Times vs. Collector Current
E
T
V
35
t
R
V
off
J
CE
f
CE
G
= 125ºC , V
Energy Loss vs. Gate Resistance
= 10 Ω , V
20
= 200V
30
= 200V
Fig. 12. Inductive Switching
45
Fig. 14. Inductive Swiching
T
Fig. 16. Inductive Turn-off
25
J
= 25ºC
T
J
55
30
t
E
d(off)
GE
40
- Degrees Centigrade
GE
on
I
I
= 15V
= 15V
- - - -
C
35
R
C
- - - -
I
65
= 42A
G
C
= 84A
- Amperes
- Ohms
40
50
75
45
E
R
V
off
CE
G
85
I
I
50
= 10 Ω
60
C
C
= 200V
= 42A
= 84A
T
55
J
95
,
= 125ºC
V
60
E
70
GE
on
105
= 15V
- - - -
65
115
70
80
75
125
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
140
135
130
125
120
115
110
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
200
190
180
170
160
150
140
130
120
110
100
170
160
150
140
130
120
110
100
90
80
70
20
10
25
Switching Times vs. Junction Temperature
E
R
V
25
off
G
CE
15
Switching Times vs. Gate Resistance
t
T
V
t
R
V
= 10
35
f
f
J
G
CE
= 200V
CE
I
Energy Loss vs. Collector Current
= 125ºC,
30
C
= 10 Ω , V
20
= 200V
= 200V
Ω ,
= 84A
IXGA42N30C3 IXGH42N30C3
45
Fig. 13. Inductive Swiching
Fig. 15. Inductive Turn-off
Fig. 17. Inductive Turn-off
35
25
I
V
T
C
E
GE
I
J
on
t
t
= 42A
40
V
d(off)
55
d(off)
C
30
- Degrees Centigrade
GE
GE
= 15V
= 42A
- - - -
I
= 15V
C
= 15V
45
35
- - - -
- - - -
65
T
- Amperes
R
J
G
= 125ºC
50
40
I
- Ohms
C
75
= 84A
45
55
85
50
60
55
65
T
95
J
IXGP42N30C3
= 25ºC
60
70
105
65
75
115
70
80
125
75
85
600
550
500
450
400
350
300
250
200
150
100
135
130
125
120
115
110
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0