IXGH30N60C3 IXYS, IXGH30N60C3 Datasheet - Page 3

• Manufacturer Part Number: IXGH30N60C3
• Description: IGBT 60A 600V TO-247AD
• Manufacturer: IXYS
• Series: GenX3™r

Specifications of IXGH30N60C3

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 3V @ 15V, 20A
• Current - Collector (ic) (max): 60A
• Power - Max: 220W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 60
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 30
• Vce(sat), Max, Tj=25°c, Igbt, (v): 3.0
• Tfi, Typ, Tj=25°c, Igbt, (ns): 47
• Eoff, Typ, Tj=125°c, Igbt, (mj): 0.33
• Rthjc, Max, Igbt, (°c/w): 0.56
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2008 IXYS CORPORATION, All rights reserved
5.5
5.0
4.5
4.0
3.5
3.0
2.5
40
35
30
25
20
15
10
40
35
30
25
20
15
10
5
0
5
0
0.0
0.0
7
0.4
0.4
8
Fig. 5. Collector-to-Emitter Voltage
Fig. 1. Output Characteristics
0.8
Fig. 3. Output Characteristics
vs. Gate-to-Emitter Voltage
0.8
9
1.2
1.2
10
V
I
V
CE
C
V
@ 125ºC
1.6
CE
@ 25ºC
= 40A
GE
- Volts
20A
10A
- Volts
1.6
11
- Volts
V
GE
2.0
V
= 15V
GE
13V
11V
2.0
12
= 15V
2.4
13V
2.4
13
T
2.8
J
= 25ºC
11V
2.8
14
9V
7V
3.2
7V
9V
3.2
3.6
15
180
160
140
120
100
1.1
1.0
0.9
0.8
0.7
0.6
0.5
80
60
40
20
70
60
50
40
30
20
10
0
0
25
0
5
Fig. 2. Extended Output Characteristics
2
IXGA30N60C3 IXGP30N60C3
6
Fig. 4. Dependence of V
50
4
Fig. 6. Input Admittance
Junction Temperature
6
T
J
7
- Degrees Centigrade
T
V
J
75
8
CE
= 125ºC
V
@ 25ºC
- 40ºC
GE
- Volts
25ºC
10
8
- Volts
I
C
I
= 10A
C
I
100
12
IXGH30N60C3
= 20A
C
= 40A
9
CE(sat)
14
V
125
GE
16
V
on
GE
10
= 15V
13V
11V
= 15V
9V
7V
18
150
20
11