IXGH30N60C3 IXYS, IXGH30N60C3 Datasheet - Page 4

• Manufacturer Part Number: IXGH30N60C3
• Description: IGBT 60A 600V TO-247AD
• Manufacturer: IXYS
• Series: GenX3™r

Specifications of IXGH30N60C3

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 3V @ 15V, 20A
• Current - Collector (ic) (max): 60A
• Power - Max: 220W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 60
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 30
• Vce(sat), Max, Tj=25°c, Igbt, (v): 3.0
• Tfi, Typ, Tj=25°c, Igbt, (ns): 47
• Eoff, Typ, Tj=125°c, Igbt, (mj): 0.33
• Rthjc, Max, Igbt, (°c/w): 0.56
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions and dimensions.
10,000
1,000
1.00
0.10
0.01
100
24
22
20
18
16
14
12
10
10
0.00001
8
6
4
2
0
0
0
f
= 1 MHz
10
5
20
Fig. 7. Transconductance
10
Fig. 9. Capacitance
0.0001
30
15
T
I
J
C
V
= - 40ºC
CE
- Amperes
40
20
- Volts
25ºC
125ºC
50
25
Fig. 11. Maximum Transient Thermal Impedance
C ies
C res
C oes
0.001
60
30
70
35
Pulse Width - Seconds
80
40
0.01
16
14
12
10
60
50
40
30
20
10
8
6
4
2
0
0
100
0
Fig. 10. Reverse-Bias Safe Operating Area
V
I
I
C
G
T
R
dV / dt < 10V / ns
CE
J
IXGA30N60C3 IXGP30N60C3
G
= 20A
= 10 mA
5
= 125ºC
= 300V
= 5Ω
200
0.1
10
Fig. 8. Gate Charge
Q
300
15
G
- NanoCoulombs
V
CE
20
- Volts
400
IXGH30N60C3
1
25
500
30
35
600
10
40