IRG4IBC30SPBF International Rectifier, IRG4IBC30SPBF Datasheet - Page 2

• Manufacturer Part Number: IRG4IBC30SPBF
• Description: IGBT STD 600V 23.5A TO220FP
• Manufacturer: International Rectifier

Specifications of IRG4IBC30SPBF

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.6V @ 15V, 18A
• Current - Collector (ic) (max): 23.5A
• Power - Max: 45W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 23.5A
• Collector Emitter Voltage Vces: 1.6V
• Power Dissipation Pd: 45W
• Collector Emitter Voltage V(br)ceo: 600V
• Transistor Case Style: TO-220FP
• No. Of Pins: 3
• Rohs Compliant: Yes
• Operating Temperature Range: -55°C To +150°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: *IRG4IBC30SPBF

IRG4IBC30SPbF
Notes:

‚
ƒ
Electrical Characteristics @ T
Switching Characteristics @ T
V
V
∆V
V
V
∆V
g
I
Q
Q
Q
t
t
t
t
E
E
E
t
t
t
t
E
L
C
C
C
CES
GES
d(on)
r
d(off)
f
d(on)
r
d(off)
f
fe
E
(BR)CES
(BR)ECS
CE(ON)
GE(th)
on
off
ts
ts
ies
oes
res
2
g
ge
gc
(BR)CES
GE(th)
Repetitive rating; V
max. junction temperature. (See Fig. 13b)
V
(See Fig. 13a)
Repetitive rating; pulse width limited by maximum
junction temperature.
CC
/∆T
/∆T
= 80%(V
J
J
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage „
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance …
Gate-to-Emitter Leakage Current
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CES
), V
GE
GE
= 20V, pulse width limited by
= 20V, L = 10µH, R
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
G
= 23Ω
Min. Typ. Max. Units
Min. Typ. Max. Units
600
3.0
6.0
18
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
„
…
1100
6.55
0.26
3.45
3.71
0.75
1.40
1.84
1.45
540
390
790
760
-11
7.3
7.5
50
17
22
18
21
19
72
19
—
—
—
—
—
—
—
11
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
1000
±100
250
810
590
1.6
6.0
2.0
5.6
—
—
—
—
—
—
—
75
11
26
—
—
—
—
—
—
—
—
—
—
—
—
—
mV/°C V
V/°C
mJ
mJ
nC
nH
nA
pF
V
V
S
V
V
V
V
V
V
V
V
V
I
V
V
T
I
V
Energy losses include "tail"
See Fig. 9, 10, 14
T
I
V
Energy losses include "tail"
See Fig. 10, 11, 14
Measured 5mm from package
V
V
ƒ = 1.0MHz
C
C
C
I
I
I
GE
GE
GE
CE
CE
CE
GE
GE
GE
GE
J
J
CC
GE
GE
GE
GE
CC
C
C
C
= 18A
= 18A, V
= 18A, V
= 25°C
= 150°C,
= 18A
= 34A
= 18A , T
= 0V, I
= 0V, I
= 0V, I
= V
= V
= 100 V, I
= 0V, V
= 0V, V
= 0V, V
= ±20V
= 400V
= 15V
= 15V, R
= 15V, R
= 0V
= 30V
GE
GE
Conditions
Conditions
, I
, I
C
C
C
CE
CE
CE
CC
CC
C
C
J
= 250µA
= 1.0A
= 1.0mA
= 250µA
= 250µA
= 150°C
G
G
C
= 600V
= 10V, T
= 600V, T
= 480V
= 480V
= 23Ω
= 23Ω
= 18A
See Fig.8
See Fig. 7
www.irf.com
J
J
= 25°C
V
See Fig.2, 5
= 150°C
GE
= 15V