IRG4IBC30SPBF International Rectifier, IRG4IBC30SPBF Datasheet - Page 5

• Manufacturer Part Number: IRG4IBC30SPBF
• Description: IGBT STD 600V 23.5A TO220FP
• Manufacturer: International Rectifier

Specifications of IRG4IBC30SPBF

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.6V @ 15V, 18A
• Current - Collector (ic) (max): 23.5A
• Power - Max: 45W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 23.5A
• Collector Emitter Voltage Vces: 1.6V
• Power Dissipation Pd: 45W
• Collector Emitter Voltage V(br)ceo: 600V
• Transistor Case Style: TO-220FP
• No. Of Pins: 3
• Rohs Compliant: Yes
• Operating Temperature Range: -55°C To +150°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: *IRG4IBC30SPBF

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Fig. 9 - Typical Switching Losses vs. Gate
3.80
3.76
3.72
3.68
3.64
3.60
2000
1500
1000
500
0
0
Fig. 7 - Typical Capacitance vs.
1
V
V
T
I
J
C
CC
GE
Collector-to-Emitter Voltage
= 480V
= 15V
= 25 C
= 18A
V
R
10
CE
G
R
°
V
C
C
C
G
, Collector-to-Emitter Voltage (V)
, Gate Resistance (Ohm)
Resistance
, Gate Resistance
GE
ies
res
oes
=
=
=
=
C ies
C oes
C res
20
0V,
C
C
C
ge
gc
ce
+ C
+ C
10
f = 1MHz
gc ,
gc
30
(Ω)
C
ce
SHORTED
40
100
50
100
0.1
10
1
20
16
12
-60 -40 -20
Fig. 10 - Typical Switching Losses vs.
8
4
0
R
V
V
0
GE
CC
G
V
Fig. 8 - Typical Gate Charge vs.
I
CC
C
= 15V
= 480V
= 23Ohm
IRG4IBC30SPbF
= 400V
= 18A
T , Junction Temperature ( C )
Gate-to-Emitter Voltage
10
Junction Temperature
J
Q , Total Gate Charge (nC)
Ω
G
0
20
20 40 60 80 100 120 140 160
30
40
I =
I =
I =
C
C
C
°
50
36
18
9
A
A
A
5
60