IXGH60N60C3 IXYS, IXGH60N60C3 Datasheet
IXGH60N60C3
Specifications of IXGH60N60C3
Available stocks
Related parts for IXGH60N60C3
IXGH60N60C3 Summary of contents
Page 1
... IXYS extends its GenX3 insulated gate bipolar transistor (IGBT) product line to TM 600 volts. These new IGBTs are manufactured using IXYS’ state-of-the-art GenX3 IGBT process and utilize IXYS’ advanced Punch-Though (PT) technology, tailored to provide higher surge current capabilities, lower saturation voltages, and lower switching losses ...
Page 2
... Provides 2500V, UL recognized isolation with superior thermal performance (E153432). ƒ Improves termperature and power cycling capability. ƒ Cost effective clip mounting. ƒ * IXYS Patented Packages, Patent No. 6,404,065 * For information regarding IXYS ISoPLUS packages, visit http://www.ixys.com/IXAN0022.pdf 600V GenX3 (a3) IGBTs summary Table TM a3-class ultra low V(sat) IGBTs n The switching and conduction losses for the A3-Class are optimized for sub-5kHz switching frequency applications ...
Page 3
... IXGR48N60C3D1 600 IXGP30N60C3 600 IXGH30N60C3D1 600 IXGA30N60C3 600 IXGR72N60C3D1 600 IXGP48N60C3 600 IXGH48N60C3 600 IXGH48N60C3D1 600 IXGA48N60C3 600 IXGH60N60C3 600 IXGH60N60C3D1 600 IXGX72N60C3H1 600 IXGH72N60C3 600 Up to 40kHz n c Vce (sat tfi typ o o (a) (V) (ns) 2.1 116 27 2.1 116 27 1 ...
Page 4
... 3-Phase AC Vs www.ixys.com BenefITs High power density ƒ ƒ Low gate drive requirement The figure on the left illustrates a general circuit topology of an inverter welding power source. This circuit topology is composed of four stages: A) Rectifier stage, B) PFC & Boost stage, C) Power stage, and D) Output stage ...