IXGH60N60C3 IXYS, IXGH60N60C3 Datasheet

no-image

IXGH60N60C3

Manufacturer Part Number
IXGH60N60C3
Description
IGBT 75A 600V TO-247AD
Manufacturer
IXYS
Series
GenX3™r
Datasheets

Specifications of IXGH60N60C3

Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 40A
Current - Collector (ic) (max)
75A
Power - Max
380W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247AD
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Collector Current (dc) (max)
75A
Gate To Emitter Voltage (max)
±20V
Package Type
TO-247AD
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55C
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
75
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
60
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.5
Tfi, Typ, Tj=25°c, Igbt, (ns)
50
Eoff, Typ, Tj=125°c, Igbt, (mj)
0.8
Rthjc, Max, Igbt, (°c/w)
0.33
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXGH60N60C3D
Manufacturer:
SYNERGY
Quantity:
5 000
Company:
Part Number:
IXGH60N60C3D1
Quantity:
2 400
GenX3
High Speed PT IGBTs for
40-100kHz switching
Symbol
V
V
V
V
I
I
I
I
E
SSOA
(RBSOA)
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
V
© 2008 IXYS CORPORATION, All rights reserved
C25
C110
CM
AS
CES
GES
J
JM
stg
L
SOLD
CES
CGR
GES
GEM
AS
C
GE(th)
CE(sat)
d
J
CES
= 25°C, unless otherwise specified)
T
T
Continuous
Transient
T
T
T
T
V
Clamped inductive load @
T
Maximum lead temperature for soldering
1.6 mm (0.062in.) from case for 10s
Mounting torque
Test Conditions
T
Test Conditions
I
I
V
V
V
I
TM
C
C
C
J
J
C
C
C
C
C
C
GE
CE
GE
CE
= 25°C, (Limited by leads)
= 25°C to 150°C
= 25°C to 150°C, R
= 110°C (chip capability)
= 25°C, 1ms
= 25°C
= 25°C
= 15V, T
= 25°C
= 250μA, V
= 250μA, V
= V
= 0V
= 0V, V
= 40A, V
600V IGBT
CES
VJ
GE
GE
= 125°C, R
= ±20V
GE
CE
= 15V
= 0V
= V
GE
GE
= 1MΩ
G
Preliminary Technical Information
= 3Ω
T
T
600V
J
J
= 125°C
= 125°C
IXGH60N60C3
Characteristic Values
Min.
600
3.0
-55 ... +150
-55 ... +150
Maximum Ratings
I
CM
1.13/10
= 125
Typ.
2.2
1.7
±20
±30
300
400
380
150
300
260
600
600
75
60
40
6
±100
Max.
2.5
Nm/lb.in.
5.0
50
1 mA
mJ
μA
°C
nA
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
A
V
V
V
V
g
V
I
V
t
TO-247 AD (IXGH)
G = Gate
E = Emitter
Features
Applications
C110
fi (typ)
Square RBSOA
High avalanche capability
High current handling capability
MOS Gate turn-on
- drive simplicity
PFC circuits
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
CES
CE(sat)
G
C
E
= 600V
= 60A
= 55ns
≤ ≤ ≤ ≤ ≤ 2.5V
C = Collector
TAB = Collector
(TAB)
DS99928(2/08)

Related parts for IXGH60N60C3

IXGH60N60C3 Summary of contents

Page 1

... CES CE CES ±20V 0V, V GES 40A 15V CE(sat © 2008 IXYS CORPORATION, All rights reserved Preliminary Technical Information IXGH60N60C3 Maximum Ratings 600 = 1MΩ 600 GE ±20 ± 300 40 400 = 3Ω 125 G CM ≤ 600V 380 -55 ... +150 150 -55 ... +150 300 260 1.13/10 6 Characteristic Values Min ...

Page 2

... Min. Typ 3600 210 82 115 = 0.5 • CES 0. 0. 1.25 116 110 0.90 0.21 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGH60N60C3 TO-247 (IXGH) Outline Max Terminals Gate Source 110 ns Dim. Millimeter Min 4 1.65 ...

Page 3

... GE 13V 11V 2.0 2.4 2.8 3.2 = 15V 13V 11V 2.0 2.4 2.8 3.2 160 T = 25ºC J 140 120 100 IXGH60N60C3 Fig. 2. Extended Output Characteristics @ 25ºC 300 V = 15V GE 13V 250 11V 200 150 9V 100 Volts CE Fig. 4. Dependence of V Junction Temperature 1 15V GE 1 ...

Page 4

... C ies 100 80 C oes res 20 0 100 Fig. 11. Maximum Transient Thermal Impedance 0.01 Pulse Width - Seconds IXGH60N60C3 Fig. 8. Gate Charge V = 300V 40A NanoCoulombs G Fig. 10. Reverse-Bias Safe Operating Area T = 125º Ω < 10V / ns 200 ...

Page 5

... V 120 R = 15V G GE 140 V = 480V CE 130 110 120 T = 125ºC 110 100 J 100 25º IXGH60N60C3 Fig. 13. Inductive Switching Energy Loss vs. Collector Current - - - - E E off on Ω 15V 480V 125ºC, 25º Amperes C Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance ...

Page 6

... 480V Degrees Centigrade J IXYS reserves the right to change limits, test conditions, and dimensions. 110 55 100 80A 80A 40A 105 115 125 IXGH60N60C3 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current d(on Ω 15V 480V 25ºC, 125º Amperes C IXYS REF: G_60N60C3(6D)02-12-08 ...

Related keywords