IXGH50N60B2 IXYS, IXGH50N60B2 Datasheet - Page 3

• Manufacturer Part Number: IXGH50N60B2
• Description: IGBT 600V 75A TO-247
• Manufacturer: IXYS
• Series: HiPerFAST™r

Specifications of IXGH50N60B2

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2V @ 15V, 40A
• Current - Collector (ic) (max): 75A
• Power - Max: 400W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 75
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 50
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2
• Tfi, Typ, Tj=25°c, Igbt, (ns): 82
• Eoff, Typ, Tj=125°c, Igbt, (mj): 1.55
• Rthjc, Max, Igbt, (°c/w): 0.31
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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3.7
3.4
3.1
2.8
2.5
2.2
1.9
1.6
1.3
80
70
60
50
40
30
20
10
80
70
60
50
40
30
20
10
0
0
0.5
0.5
5
Fig. 5. Collector-to-Em itter Voltage
6
Fig. 3. Output Characteristics
Fig. 1. Output Characte ristics
vs. Gate-to-Em itter voltage
7
1
1
8
V
I
V
C
GE
GE
9
@ 125 Deg. C
= 80A
V
@ 25 Deg. C
1.5
= 15V
1.5
40A
20A
C E
V
V
= 15V
10 11 12 13 14 15 16 17
13V
11V
G E
CE
13V
11V
- Volts
- Volts
- Volts
2
2
T
J
9V
6V
7V
5V
= 25ºC
9V
6V
7V
5V
2.5
2.5
3
3
200
180
160
140
120
100
320
280
240
200
160
120
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
80
60
40
20
80
40
0
0
-50
Fig. 2. Extended Output Characte ristics
4
0
V
4.5
Fig. 4. De pende nce of V
-25
T
GE
J
1
Fig. 6. Input Adm ittance
= 125ºC
= 15V
-40ºC
25ºC
V
5
GE
0
T
2
J
= 15V
- Degrees Centigrade
5.5
Tem perature
@ 25 de g. C
13V
25
V
3
V
G E
C E
6
- Volts
50
- Volts
4
6.5
IXGH 50N60B2
IXGT 50N60B2
75
11V
9V
7V
5V
5
7
I
I
CE(sat)
I
C
C
C
= 20A
= 80A
100
= 40A
6
7.5
on
125
7
8
150
8.5
8