IXGH50N60B2 IXYS, IXGH50N60B2 Datasheet - Page 5

• Manufacturer Part Number: IXGH50N60B2
• Description: IGBT 600V 75A TO-247
• Manufacturer: IXYS
• Series: HiPerFAST™r

Specifications of IXGH50N60B2

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2V @ 15V, 40A
• Current - Collector (ic) (max): 75A
• Power - Max: 400W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 75
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 50
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2
• Tfi, Typ, Tj=25°c, Igbt, (ns): 82
• Eoff, Typ, Tj=125°c, Igbt, (mj): 1.55
• Rthjc, Max, Igbt, (°c/w): 0.31
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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350
300
250
200
150
100
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
50
16
14
12
10
0
8
6
4
2
0
25
0
1
t
t
R
V
V
Sw itching Tim e on Te m perature
d(off)
fi
35
Fig. 13. De pendence of Turn-Off
GE
CE
G
V
I
I
C
G
-
CE
= 5Ω
= 480V
= 40A
= 15V
= 10mA
- - - - -
45
= 300V
30
Fig. 15. Gate Charge
T
I
C
J
= 80A
55
- Degrees Centigrade
Q
G
65
- nanoCoulombs
60
75
I
C
= 40A
85
90
Fig. 17. Maxim um Transient Therm al Resistance
95
105 115 125
120
10
I
C
= 20A
Pulse Width - milliseconds
150
10000
1000
100
10
90
80
70
60
50
40
30
20
10
0
100
0
f = 1 MHz
5
T
R
dV/dT < 10V/ns
J
200
G
= 125
Fig. 16. Capacitance
100
= 10Ω
Fig. 14. Reverse -Bias
Safe Operating Are a
10
º
C
300
15
V
V
C E
C E
20
- Volts
- Volts
400
IXGH 50N60B2
IXGT 50N60B2
25
500
C
C
C
30
ies
oes
res
35
600
1000
40