IXGH10N170 IXYS, IXGH10N170 Datasheet - Page 3

• Manufacturer Part Number: IXGH10N170
• Description: IGBT 1700V 20A TO-247
• Manufacturer: IXYS

Specifications of IXGH10N170

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1700V
• Vce(on) (max) @ Vge, Ic: 4V @ 15V, 10A
• Current - Collector (ic) (max): 20A
• Power - Max: 110W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Vces, (v): 1700
• Ic25, Tc=25°c, Igbt, (a): 20
• Ic90, Tc=90°c, Igbt, (a): 10
• Vce(sat), Max, Tj=25°c, Igbt, (v): 4
• Tfi, Typ, Igbt, (ns): 495
• Eoff, Typ, Tj=125°c, Igbt, (mj): 4.7
• Rthjc, Max, Igbt, (°c/w): 1.1
• If, Tc=90°c, Diode, (a): -
• Rthjc, Max, Diode, (k/w): -
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2008 IXYS CORPORATION, All rights reserved
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
20
18
16
14
12
10
20
18
16
14
12
10
8
6
4
2
0
8
6
4
2
0
0.0
0.0
6
0.5
0.5
7
Fig. 5. Collector-to-Emitter Voltage
1.0
Fig. 1. Output Characteristics
Fig. 3. Output Characteristics
vs. Gate-to-Emitter Voltage
5A
8
1.0
1.5
10A
9
I
1.5
C
2.0
= 20A
V
V
V
CE
@ 125ºC
CE
@ 25ºC
10
GE
- Volts
- Volts
2.0
2.5
- Volts
11
3.0
2.5
V
GE
12
V
3.5
= 15V
GE
13V
11V
3.0
T
= 15V
J
13
13V
11V
= 25ºC
4.0
3.5
7V
5V
9V
14
4.5
9V
7V
5V
4.0
5.0
15
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
80
70
60
50
40
30
20
10
35
30
25
20
15
10
0
5
0
4.5
-50
0
V
5.0
GE
Fig. 2. Extended Output Characteristics
2
-25
= 15V
5.5
Fig. 4. Dependence of V
4
Fig. 6. Input Admittance
0
6.0
Junction Temperature
6
T
J
6.5
- Degrees Centigrade
25
8
V
V
@ 25ºC
CE
7.0
GE
10
- Volts
50
- Volts
I
C
7.5
= 20A
12
I
75
8.0
C
IXGH10N170
IXGT10N170
T
=10A
J
CE(sat)
= - 40ºC
14
I
IXYS REF: G_10N170(3N)10-13-08-A
C
8.5
V
125ºC
100
= 5A
25ºC
GE
16
= 15V
13V
on
9.0
125
11V
18
9.5
9V
7V
10.0
150
20