IXGH10N170 IXYS, IXGH10N170 Datasheet - Page 4

• Manufacturer Part Number: IXGH10N170
• Description: IGBT 1700V 20A TO-247
• Manufacturer: IXYS

Specifications of IXGH10N170

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1700V
• Vce(on) (max) @ Vge, Ic: 4V @ 15V, 10A
• Current - Collector (ic) (max): 20A
• Power - Max: 110W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Vces, (v): 1700
• Ic25, Tc=25°c, Igbt, (a): 20
• Ic90, Tc=90°c, Igbt, (a): 10
• Vce(sat), Max, Tj=25°c, Igbt, (v): 4
• Tfi, Typ, Igbt, (ns): 495
• Eoff, Typ, Tj=125°c, Igbt, (mj): 4.7
• Rthjc, Max, Igbt, (°c/w): 1.1
• If, Tc=90°c, Diode, (a): -
• Rthjc, Max, Diode, (k/w): -
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
10.0
1.0
0.1
10
22
20
18
16
14
12
10
2.0
8
6
4
2
0
0.0001
9
8
7
6
5
4
3
2
1
0
200
0
T
R
dV / dt < 10V / ns
Fig. 9. Reverse-Bias Safe Operating Area
J
G
400
= 150ºC
= 16Ω
5
600
Fig. 7. Transconductance
10
800
I
C
V
CE
- Amperes
15
- Volts
1000
0.001
Fig. 11. Maximum Transient Thermal Impedance
20
1200
25
T
1400
J
= - 40ºC
125ºC
25ºC
1600
30
Pulse Width - Second
1800
35
0.01
1,000
100
10
16
14
12
10
8
6
4
2
0
0
0
f
= 1 MHz
V
I
I
C
G
CE
5
4
= 10A
= 10mA
= 850V
10
8
Fig. 8. Gate Charge
Fig. 10. Capacitance
Q
15
12
C res
G
- NanoCoulombs
V
0.1
CE
20
- Volts
16
C oes
C ies
25
20
IXGH10N170
IXGT10N170
30
24
35
28
40
32
1