IXGH16N170A IXYS, IXGH16N170A Datasheet
Home Discrete Semiconductor Products IGBTs - Single IXGH16N170A
Manufacturer Part Number
IXGH16N170A
Description
IGBT 1700V 16A TO-247
Specifications of IXGH16N170A
Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
1700V
Vce(on) (max) @ Vge, Ic
5V @ 15V, 11A
Current - Collector (ic) (max)
16A
Power - Max
190W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247
Channel Type
N
Configuration
Single
Collector-emitter Voltage
1.7kV
Collector Current (dc) (max)
16A
Gate To Emitter Voltage (max)
±20V
Package Type
TO-247AD
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Vces, (v)
1700
Ic25, Tc=25°c, Igbt, (a)
16
Ic90, Tc=90°c, Igbt, (a)
8
Vce(sat), Max, Tj=25°c, Igbt, (v)
5
Tfi, Typ, Igbt, (ns)
40
Eoff, Typ, Tj=125°c, Igbt, (mj)
1.1
Rthjc, Max, Igbt, (°c/w)
0.65
If, Tc=90°c, Diode, (a)
-
Rthjc, Max, Diode, (k/w)
-
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Part Number:
IXGH16N170A H1
High Voltage
IGBT
Preliminary Data Sheet
Symbol
BV
V
I
I
V
Symbol
V
V
V
V
I
I
I
I
SSOA
(RBSOA)
t
P
T
T
T
M
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10s
Weight
© 2005 IXYS All rights reserved
CM
GES
C25
C90
F90
CES
SC
J
JM
stg
GE(th)
CE(sat)
CGR
GEM
C
CES
GES
d
CES
Test Conditions
I
I
V
V
V
I
Test Conditions
T
T
Continuous
Transient
T
T
T
T
V
Clamped inductive load
T
T
Mounting torque (M3)
C
C
C
C
C
C
C
C
CE
GE
CE
J
J
GE
J
= 125°C, V
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 90°C
= 90°C, Diode
= 25°C, 1 ms
= 15 V, T
= 25°C
= 250 μA, V
= 250 μA, V
= 0.8 • V
= 0 V, Note 1
= 0 V, V
= I
C90
, V
GE
GE
VJ
CES
CE
= 15 V
= ±20 V
= 125°C, R
GE
CE
= 1200 V; V
T
J
= V
= 0 V
= 125°C 16N170A
GE
GE
= 1 MΩ
G
= 10Ω
T
GE
(T
16N170A
16N170AH1
16N170AH1
J
J
= 15 V, R
= 125°C
IXGH 16N170A
IXGT 16N170A
IXGH 16N170AH1
IXGT 16N170AH1
= 25°C, unless otherwise specified)
TO-247
TO-247
TO-268
G
= 22Ω
1700
min.
3.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
@ 0.8 V
typ.
4.0
4.8
1.13/10Nm/lb.in.
I
CM
1700
1700
300
260
±20
±30
= 40
10
190
150
16
11
17
40
max.
CES
±100
6
4
100
750
5.0
1.5
5.0
50
mA
°C
°C
μs
μA
μA
μA
nA
°C
°C
°C
W
V
V
A
A
A
V
V
V
V
V
V
A
A
g
g
TO-268 (IXGT)
TO-247 (IXGH)
V
I
V
t
G = Gate
E = Emitter
Features
Applications
Advantages
C25
fi(typ)
High blocking voltage
High current handling capability
MOS Gate turn-on
- drive simplicity
Rugged NPT structure
Molding epoxies meet UL 94 V-0
flammability classification
SONIC-FRD
International standard packages
JEDEC TO-268 and
JEDEC TO-247 AD
Capacitor discharge & pulser circuits
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
High power density
Suitable for surface mounting
Easy to mount with 1 screw,
(isolated mounting screw hole)
CES
CE(sat)
diode
G
C
TM
= 1700
=
=
=
G
E
C = Collector,
TAB = Collector
fast recovery copack
E
5.0
DS99235A(06/05)
16
70 ns
H1
C (TAB)
C (TAB)
A
V
V
Related parts for IXGH16N170A
IXGH16N170A Summary of contents
... 0.8 • V CES CE CES Note 125°C 16N170A J = ± GES CE(sat) C C90 GE © 2005 IXYS All rights reserved IXGH 16N170A IXGT 16N170A IXGH 16N170AH1 IXGT 16N170AH1 Maximum Ratings 1700 = 1 MΩ 1700 GE ±20 ± 10Ω 0 22Ω 190 -55 ... +150 150 -55 ... +150 TO-247 1 ...
... Pulse test, t ≤ 300 μs, duty cycle ≤ Switching times may increase for V increased IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25° ...
... GE 14 13V 11V Volts CE Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage 16A Volts G E © 2005 IXYS All rights reserved º C 100 13V 11V º C 1.8 1.7 1.6 1.5 7V 1.4 1.3 6V 1.2 1.1 1.0 0.9 0.8 5V 0.7 0 º IXGH/IXGT 16N170A IXGH/IXGT 16N170AH1 Fig ...
... T = 125ºC J 700 V = 15V GE 600 V = 850V CE 500 400 300 200 100 Ohms G IXYS reserves the right to change limits, test conditions, and dimensions 2.75 2.50 2.25 º 125 C J 2.00 1.75 1.50 1.25 º 1.00 0.75 0. 250 225 ...
... C 125 100 Degrees Centigrade J Fig. 15. Capacitance 10000 MHz 1000 100 C res Volts 0.1 1 © 2005 IXYS All rights reserved 32A 85 95 105 115 125 ies oes Fig. 17. Maxim um Transient Therm al Resistance 1 0 Pulse Width - milliseconds IXGH/IXGT 16N170A IXGH/IXGT 16N170AH1 Fig. 14. Gate Charge ...
... IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. ...
Related keywords
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