IXGH16N170A IXYS, IXGH16N170A Datasheet - Page 2

• Manufacturer Part Number: IXGH16N170A
• Description: IGBT 1700V 16A TO-247
• Manufacturer: IXYS

Specifications of IXGH16N170A

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1700V
• Vce(on) (max) @ Vge, Ic: 5V @ 15V, 11A
• Current - Collector (ic) (max): 16A
• Power - Max: 190W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.7kV
• Collector Current (dc) (max): 16A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247AD
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Vces, (v): 1700
• Ic25, Tc=25°c, Igbt, (a): 16
• Ic90, Tc=90°c, Igbt, (a): 8
• Vce(sat), Max, Tj=25°c, Igbt, (v): 5
• Tfi, Typ, Igbt, (ns): 40
• Eoff, Typ, Tj=125°c, Igbt, (mj): 1.1
• Rthjc, Max, Igbt, (°c/w): 0.65
• If, Tc=90°c, Diode, (a): -
• Rthjc, Max, Diode, (k/w): -
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Notes: 1.
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
g
C
C
C
Q
Q
Q
t
t
t
t
E
t
t
E
t
t
E
R
R
IXYS MOSFETs and IGBTs are covered by
Reverse Diode (FRED)
Symbol
V
t
I
R
one or moreof the following U.S. patents:
d(on)
d(off)
d(on)
d(off)
ri
fi
ri
fi
RM
rr
fs
off
on
off
thJC
thCK
ies
oes
res
g
ge
gc
F
thJC
2.
3.
Device must be heatsunk for high temperature leakage current
measurements to avoid thermal runaway.
Pulse test, t ≤ 300 μs, duty cycle ≤ 2 %
Switching times may increase for V
increased R
Test Conditions
I
Note 2
V
I
(TO-247)
Inductive load, T
I
V
Inductive load, T
I
V
Test Conditions
I
I
V
C
C
C
C
F
F
(T
CE
CE
CE
R
= I
= 20A, V
= 20A, V
= I
= I
= 1200 V
J
= 25 V, V
= 0.5 V
= 0.5 V
C90
= I
C25
C25
= 25°C unless otherwise specified)
, V
, V
, V
C25
G
; V
GE
GE
GE
.
GE
GE
CES
CES
= 15 V, V
CE
= 15 V, R
= 15 V, R
GE
= 0 V, Note 2
= 0 V, -di
,Note 3
,Note 3
= 10 V
= 0 V, f = 1 MHz
4,835,592
4,850,072
4,881,106
J
J
= 25° ° ° ° ° C
= 125° ° ° ° ° C
CE
G
G
F
/dt = 450 A/μs
= 10 Ω
= 10 Ω
= 0.5 V
4,931,844
5,017,508
5,034,796
(T
CES
J
CE
= 25°C unless otherwise specified)
5,049,961
5,063,307
5,187,117
(Clamp) > 0.8 • V
T
T
T
J
J
J
16N170A
16N170AH1 110
16N170A
16N170AH1
= 125°C
= 125°C
= 125°C
5,237,481
5,381,025
5,486,715
min.
min.
Characteristic Values
Characteristic Values
7
1620
0.85
0.25
typ.
230
400
160
175
155
typ.
CES
2.5
2.5
1.5
2.5
2.0
6,162,665
6,259,123 B1
6,306,728 B1
23
27
13
83
31
83
10
31
36
57
70
38
59
, higher T
0.65 K/W
max.
300
150
max.
2.9
0.9 K/W
1.5 mJ
J
6,404,065 B1
6,534,343
6,583,505
K/W
mJ
mJ
mJ
nC
nC
nC
or
pF
pF
pF
pF
n s
n s
n s
n s
n s
n s
n s
n s
n s
n s
S
V
V
A
A
IXGH/IXGT 16N170AH1
6,683,344
6,710,405B2
6,710,463
IXGH/IXGT 16N170A
TO-247 AD Outline
TO-268 Outline
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
1
2
1
2
Dim.
A
A
A
b
b
C
D
E
E
e
H
L
L1
L2
L3
L4
2
1
2
1
20.80
15.75
19.81
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
Min.
4.7
2.2
2.2
1.0
13.80
15.85
18.70
Millimeter
6,727,585
6,759,692
6771478 B2
.4
1.15
13.3
2.40
1.20
1.00
3.80
Min.
4.9
2.7
.02
1.9
Millimeter
5.45 BSC
0.25 BSC
.4
21.46
16.26
20.32
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
5.3
2.6
1.4
14.00
16.05
19.10
Max.
.8
1.45
13.6
2.70
1.40
1.15
4.10
e
5.1
2.9
.25
2.1
.65
∅ P
0.205 0.225
0.232 0.252
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
242 BSC
Inches
.193
.106
.001
.045
.016
.543
.624
.524
.736
.094
.047
.039
.150
Min.
.75
Inches
.215 BSC
.010 BSC
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216
Max.
.201
.114
.010
.057
.026
.551
.632
.535
.752
.106
.055
.045
.161
.83