IRG7PH30K10DPBF International Rectifier, IRG7PH30K10DPBF Datasheet
IRG7PH30K10DPBF
Specifications of IRG7PH30K10DPBF
Related parts for IRG7PH30K10DPBF
IRG7PH30K10DPBF Summary of contents
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... Mounting Torque, 6- Screw Thermal Resistance R (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) θJC R (Diode) Thermal Resistance Junction-to-Case-(each Diode) θJC R Thermal Resistance, Case-to-Sink (flat, greased surface) θCS R Thermal Resistance, Junction-to-Ambient (typical socket mount) θJA 1 IRG7PH30K10DPbF n-channel G Gate Parameter d Parameter 1200V CES I = 16A 100° ...
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... IRG7PH30K10DPbF Electrical Characteristics @ T = 25°C (unless otherwise specified) J Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES ∆V /∆T Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th) ∆V /∆TJ Threshold Voltage temp. coefficient GE(th) gfe Forward Transconductance I Collector-to-Emitter Leakage Current ...
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... V CE (V) Fig Typ. IGBT Output Characteristics T = -40° 80µs J www.irf.com 125 150 1000 10000 =15V 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8. IRG7PH30K10DPbF 200 150 100 100 120 140 160 T C (°C) Fig Power Dissipation vs. Case Temperature 100 100 1000 V CE (V) Fig ...
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... IRG7PH30K10DPbF (V) Fig Typ. IGBT Output Characteristics T = 150° 80µ (V) Fig Typical -40° (V) Fig Typical 150° 18V VGE = 15V VGE = 12V VGE = 10V VGE = 18A 18A -40°C 25°C 30 150° 0.0 1.0 2.0 3.0 4 (V) Fig Typ. Diode Forward Characteristics tp = 80µ ...
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... 20Ω 47Ω (A) Fig Typ. Diode 150°C J www.irf.com 1000 22Ω 15V T = 150° 1.0mH 1000 E OFF 60 80 100 150° 1.0mH 9.0A 15V vs IRG7PH30K10DPbF OFF 100 (A) Fig Typ. Switching Time vs 600V 22Ω 100 td OFF (Ω) Fig Typ. Switching Time vs 600V 9.0A (Ω ...
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... IRG7PH30K10DPbF 100 200 di F /dt (A/µs) Fig Typ. Diode 600V 15V 1200 5.0 Ω Ω 1000 Ω Ω 800 600 400 (A) Fig Typ. Diode 150°C J 10000 1000 100 100 200 V CE (V) Fig Typ. Capacitance vs 0V 1MHz GE 6 300 400 vs. di ...
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... THERMAL RESPONSE ) 0.001 1E-006 1E-005 Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT 0.50 0.20 0.10 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) www.irf.com IRG7PH30K10DPbF τ J τ J τ τ τ 1 τ ...
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... IRG7PH30K10DPbF DUT 0 1K Fig.C.T.1 - Gate Charge Circuit (turn-off) 4X DUT SCSOA Fig.C.T.3 - S.C. SOA Circuit R = VCC ICM DUT Rg Fig.C.T.5 - Resistive Load Circuit VCC diode clamp / DC VCC VCC G force DUT Rg Fig.C.T.2 - RBSOA Circuit DUT L -5V DUT / DRIVER Rg Fig.C.T.4 - Switching Loss Circuit C force 100K ...
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... Fig. WF2 - Typ. Turn-on Loss Waveform 800 12.5 10 700 7.5 600 5 500 2.5 400 0 300 -2.5 200 -5 100 -7.5 -10 -100 -12.5 5.00 IRG7PH30K10DPbF tr TEST CURRENT 90% test current 10% test current Eon Loss -1.8 -0.8 0.2 1.2 2.2 time (µ 150°C using Fig. CT.4 J VCE ICE ...
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... IRG7PH30K10DPbF TO-247AC package is not recommended for Surface Mount Application. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 10 5)3( Ã " C %ÃÃÃÃÃÃÃÃÃÃÃ & Data and specifications subject to change without notice. ...