IRG7PH30K10DPBF International Rectifier, IRG7PH30K10DPBF Datasheet - Page 2

• Manufacturer Part Number: IRG7PH30K10DPBF
• Description: IGBT N-CH 1200V 30A TO-247AC
• Manufacturer: International Rectifier

Specifications of IRG7PH30K10DPBF

• Igbt Type: Trench
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.35V @ 15V, 9A
• Current - Collector (ic) (max): 30A
• Power - Max: 180W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRG7PH30K10DPbF
Notes:

‚
ƒ
„
Electrical Characteristics @ T
V
∆V
V
V
∆V
gfe
I
V
I
Switching Characteristics @ T
Q
Q
Q
E
E
E
t
t
t
t
E
E
E
t
t
t
t
C
C
C
RBSOA
SCSOA
Erec
t
I
CES
GES
d(on)
r
d(off)
f
d(on)
r
d(off)
f
rr
rr
(BR)CES
CE(on)
GE(th)
FM
on
off
total
on
off
total
ies
oes
res
g
ge
gc
V
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V
R
(BR)CES
GE(th)
2
CC
θ
is measured at T
/∆TJ
= 80% (V
/∆T
J
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Collector-to-Emitter Leakage Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
CES
), V
J
GE
of approximately 90°C.
= 20V, L = 36µH, R
Parameter
Parameter
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
G
=
33Ω.
(BR)CES
safely.
Min.
1200
Min.
5.0
10
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—
—
—
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—
—
—
—
—
—
—
—
—
—
—
—
FULL SQUARE
Typ.
Typ.
1490
1070
1.11
2.05
2.56
400
530
380
910
110
810
680
130
260
710
140
-15
6.2
1.0
2.0
2.1
8.7
—
—
—
45
20
14
24
38
11
23
63
26
—
12
Max. Units
Max. Units
1360
2.35
±100
760
600
130
7.5
3.0
25
68
13
30
31
41
56
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—
—
mV/°C V
V/°C V
µA
nA
nC
pF
µJ
ns
µJ
ns
µs
µJ
ns
V
V
V
S
V
A
V
I
I
V
V
V
V
I
I
V
I
V
V
I
R
Energy losses include tail & diode reverse recovery
I
R
I
R
Energy losses include tail & diode reverse recovery
I
R
T
V
V
f = 1.0Mhz
T
V
Rg = 22Ω, V
T
Rg = 22Ω, V
T
V
V
C
C
F
F
C
C
C
C
C
J
J
J
J
GE
GE
CE
CE
CE
GE
GE
GE
GE
CC
GE
CC
CC
CC
GE
G
G
G
G
= 9.0A
= 9.0A, T
= 9.0A, V
= 9.0A, V
= 9.0A
= 9.0A, V
= 9.0A, V
= 9.0A, V
= 9.0A, V
=22Ω, L=1.0mH, L
= 150°C
= 150°C, I
= 150°C, V
= 150°C
= 22Ω, L = 1.0mH, L
= 22Ω, L = 1.0mH, L
= 22Ω, L = 1.0mH, L
= V
= V
= 50V, I
= 0V, I
= 0V, I
= 0V, V
= 0V, V
= ±30V
= 15V
= 600V
= 0V
= 30V
= 960V, Vp =1200V
= 600V, I
= 15V, Rg = 20Ω, L =1.0mH, L
Conditions
GE
GE
, I
, I
C
C
J
GE
GE
C
C
CC
CC
CC
CC
CE
CE
C
= 250µA
= 1mA (25°C-150°C)
GE
GE
= 150°C
C
F
= 400µA
= 400µA (25°C - 150°C)
= 9.0A, PW = 80µs
CC
= 15V, T
= 15V, T
= 1200V
= 1200V, T
= 600V, V
= 600V, V
= 600V, V
= 600V, V
= 36A
= 9.0A
= +20V to 0V
= +15V to 0V
= 600V, Vp =1200V
Conditions
S
=150nH, T
J
J
S
S
S
= 25°C
= 150°C
GE
GE
GE
GE
= 150nH, T
= 150nH, T
= 150nH
J
=15V
= 150°C
= 15V
= 15V
= 15V
J
= 150°C
s
= 150nH
J
J
= 25°C
= 25°C
www.irf.com
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WF1, WF2
17,18,19
Ref.Fig
Ref.Fig
22, CT3
9,10,11
11,12
13,15
14,16
20,21
5,6,7
WF1
WF2
WF4
9,10
CT6
CT6
CT1
CT4
CT4
CT4
CT4
CT2
WF3
24
23
8
4