IRG7PH30K10DPBF International Rectifier, IRG7PH30K10DPBF Datasheet - Page 6

• Manufacturer Part Number: IRG7PH30K10DPBF
• Description: IGBT N-CH 1200V 30A TO-247AC
• Manufacturer: International Rectifier

Specifications of IRG7PH30K10DPBF

• Igbt Type: Trench
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.35V @ 15V, 9A
• Current - Collector (ic) (max): 30A
• Power - Max: 180W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRG7PH30K10DPbF
6
V
10000
1200
1000
1000
CC
800
600
400
100
18
16
14
12
10
10
1
8
= 600V; V
Fig. 23 - Typ. Capacitance vs. V
Fig. 19 - Typ. Diode I
0
0
0
Fig. 21 - Typ. Diode E
100
V
R G = 5.0 Ω
R G = 10 Ω
R G = 20 Ω
R G = 47 Ω
GE
100
GE
5
= 0V; f = 1MHz
T
= 15V; I
J
di F /dt (A/µs)
= 150°C
200
V CE (V)
I F (A)
200
10
F
Cies
300
= 9.0A; T
Coes
RR
Cres
RR
vs. di
300
vs. I
15
400
F
J
F
/dt
CE
= 150°C
400
500
20
3000
2500
2000
1500
1000
48
40
32
24
16
16
14
12
10
Fig. 24 - Typical Gate Charge vs. V
8
8
6
4
2
0
V
Fig. 22 - V
Fig. 20 - Typ. Diode Q
CC
8
0
0
= 600V; V
47Ω
V
I
CE
CC
10
Q G , Total Gate Charge (nC)
18A
100
10
= 9.0A; L = 600µH
= 600V; T
GE
9.0A
vs. Short Circuit Time
GE
T sc
V CES = 600V
V CES = 400V
di F /dt (A/µs)
20
20Ω
4.5A
V GE (V)
= 15V; T
200
12
C
= 150°C
10Ω
30
RR
I sc
vs. di
J
= 150°C
14
300
40
F
/dt
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5.0Ω
GE
16
50
400
60
50
40
30
20
10